High-Speed and High-Light Output Power of InGaAs/GaAs HBLETs With an InMoOx Contact

2014 ◽  
Vol 26 (16) ◽  
pp. 1649-1652 ◽  
Author(s):  
Heng-Jui Chang ◽  
Tzu-Hsuan Huang ◽  
Chia-Lung Tsai ◽  
Chong-Long Ho ◽  
Meng-Chyi Wu
Keyword(s):  
Output Power ◽  
High Speed ◽  
Light Output ◽  
High Light ◽  
Light Output Power ◽  
High Light Output

Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  
Keyword(s):  
Output Power ◽  
Light Emitting Diodes ◽  
Light Output ◽  
Light Output Power ◽  
Light Emitting

Perspectives for high resolution and high light output LuAP:Ce crystals

2005 ◽  
Vol 52 (5) ◽  
pp. 1823-1829 ◽  
Author(s):  
M. Balcerzyk ◽  
M. Moszynski ◽  
Z. Galazka ◽  
M. Kapusta ◽  
A. Syntfeld ◽  
...  
Keyword(s):  
High Resolution ◽  
Light Output ◽  
High Light ◽  
High Light Output

Reciprocal Space Mapping of X-Ray Diffraction Intensity of GaN-Based Laser Diodes Grown on GaN Substrates

2003 ◽  
Vol 798 ◽  
Author(s):  
K. Tachibana ◽  
Y. Harada ◽  
S. Saito ◽  
S. Nunoue ◽  
H. Katsuno ◽  
...  
Keyword(s):  
Output Power ◽  
Sapphire Substrate ◽  
Light Output ◽  
Space Mapping ◽  
Reciprocal Space ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Light Output Power ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTCharacterization by reciprocal space mapping of x-ray diffraction (XRD) intensity was carried out for epitaxial layers of GaN-based laser structures on two GaN substrates: GaN substrate and GaN template on sapphire substrate. The difference between these two substrates was shown clearly. The distribution of XRD intensity of the epitaxial layers on GaN substrate was smaller than that of the epitaxial layers on GaN template on sapphire substrate. In the lasers with the epitaxial structure on GaN substrate, the light output power was as high as 200 mW under continuous-wave operation at room temperature. Excellent noise characteristics with relative intensity noise of -132 dB/Hz were also obtained at a low light output power of 3 mW without any high-frequency modulation. These results support that GaN substrates are promising for realizing GaN-based lasers with high performance.

scholarly journals High-light-output scintillator for photodiode readout: LuI3:Ce3+

2006 ◽  
Vol 99 (12) ◽  
pp. 123520 ◽  
Author(s):  
M. D. Birowosuto ◽  
P. Dorenbos ◽  
C. W. E. van Eijk ◽  
K. W. Krämer ◽  
H. U. Güdel
Keyword(s):  
Light Output ◽  
High Light ◽  
High Light Output

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

2017 ◽  
Vol 138 ◽  
pp. 84-88 ◽  
Author(s):  
Chia-Lung Tsai ◽  
Hsueh-Hsing Liu ◽  
Jun-Wei Chen ◽  
Chien-Pin Lu ◽  
Kazutada Ikenaga ◽  
...  
Keyword(s):  
Output Power ◽  
Light Output ◽  
Light Output Power ◽  
High Quality ◽  
Duv Led

Enhanced light output power of InGaN-based amber LEDs by strain-compensating AlN/AlGaN barriers

2016 ◽  
Vol 448 ◽  
pp. 105-108 ◽  
Author(s):  
Daisuke Iida ◽  
Shen Lu ◽  
Sota Hirahara ◽  
Kazumasa Niwa ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Output Power ◽  
Light Output ◽  
Light Output Power
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