GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation

2017 ◽  
Vol 29 (24) ◽  
pp. 2203-2206 ◽  
Author(s):  
Jianping Liu ◽  
Liqun Zhang ◽  
Deyao Li ◽  
Kun Zhou ◽  
Yang Cheng ◽  
...  
2000 ◽  
Vol 10 (01) ◽  
pp. 319-326
Author(s):  
Y. ZHOU ◽  
Y. XIONG ◽  
Y.-H. LO ◽  
C. JI ◽  
Z. H. ZHU ◽  
...  

By employing a reactive low temperature wafer bonding technique, we have demonstrated oxide-defined 850 nm vertical-cavity surface-emitting lasers (VCSEL's) on Si substrates. Devices reach a differential quantum efficiency of 53% and a light output power of 7.1 mW under room temperature and continuous-wave operation without a heat sink.


1994 ◽  
Vol 30 (7) ◽  
pp. 568-570 ◽  
Author(s):  
N. Nakayama ◽  
M. Ozawa ◽  
T. Ohata ◽  
A. Ishibashi ◽  
S. Itoh ◽  
...  

Crystals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 1563
Author(s):  
Srinivas Gandrothula ◽  
Haojun Zhang ◽  
Pavel Shapturenka ◽  
Ryan Anderson ◽  
Matthew S. Wong ◽  
...  

Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202̅1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.


2007 ◽  
Vol 1 (1) ◽  
pp. 011102 ◽  
Author(s):  
Masashi Kubota ◽  
Kuniyoshi Okamoto ◽  
Taketoshi Tanaka ◽  
Hiroaki Ohta

2018 ◽  
Vol 26 (2) ◽  
pp. 1564 ◽  
Author(s):  
Shlomo Mehari ◽  
Daniel A. Cohen ◽  
Daniel L. Becerra ◽  
Shuji Nakamura ◽  
Steven P. DenBaars

2009 ◽  
Vol 30 (11) ◽  
pp. 1152-1154 ◽  
Author(s):  
Hung-Wen Huang ◽  
Chung-Hsiang Lin ◽  
Zhi-Kai Huang ◽  
Kang-Yuan Lee ◽  
Chang-Chin Yu ◽  
...  

2003 ◽  
Vol 39 (10) ◽  
pp. 777 ◽  
Author(s):  
D. Gollub ◽  
S. Moses ◽  
M. Fischer ◽  
A. Forchel

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