scholarly journals Specific contact resistivity measurement by a vertical Kelvin test structure

1987 ◽  
Vol 34 (6) ◽  
pp. 1390-1395 ◽  
Author(s):  
Tan Fu Lei ◽  
Len-Yi Leu ◽  
Chung Len Lee
Keyword(s):  
Resistivity Measurement ◽  
Contact Resistivity ◽  
Test Structure ◽  
Specific Contact ◽  
Specific Contact Resistivity

Specific contact resistivity of Al-NiSi contacts using Cross Kelvin Resistor test structure chains

2005 ◽  
Author(s):  
Anthony S. Holland ◽  
Madhu Bhaskaran ◽  
Sharath Sriram ◽  
Geoffrey K. Reeves ◽  
Vykundh Ravichandran ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Test Structure ◽  
Specific Contact ◽  
Specific Contact Resistivity

The sidewall resistor—A novel test structure to reliably extract specific contact resistivity

1986 ◽  
Vol 7 (8) ◽  
pp. 477-479 ◽  
Author(s):  
W.M. Loh ◽  
P.J. Wright ◽  
T.A. Schreyer ◽  
S.E. Swirhun ◽  
K.C. Saraswat ◽  
...  
Keyword(s):  
Contact Resistivity ◽  
Test Structure ◽  
Specific Contact ◽  
Specific Contact Resistivity

scholarly journals Using a two-contact circular test structure to determine the specific contact resistivity of contacts to bulk semiconductors

2015 ◽  
Vol 28 (3) ◽  
pp. 457-464
Author(s):  
Aaron Collins ◽  
Yue Pan ◽  
Anthony Holland
Keyword(s):  
Three Dimensional ◽  
Contact Resistivity ◽  
Test Structure ◽  
Contact Structures ◽  
Experimental Measurements ◽  
Circular Test ◽  
Bulk Semiconductors ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
P Type

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)?10-6 ??cm2 for the Ni-Ge contacts and (1.3-2.4)?10-3 ??cm2 for the Ti-SiC.

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