Statistical demonstration of silicide-like uniform and ultra-low specific contact resistivity using a metal/high-k/Si stack in a sidewall contact test structure

Author(s):  
K. Majumdar ◽  
R. Clark ◽  
T. Ngai ◽  
K. Tapily ◽  
S. Consiglio ◽  
...  
2005 ◽  
Author(s):  
Anthony S. Holland ◽  
Madhu Bhaskaran ◽  
Sharath Sriram ◽  
Geoffrey K. Reeves ◽  
Vykundh Ravichandran ◽  
...  

1986 ◽  
Vol 7 (8) ◽  
pp. 477-479 ◽  
Author(s):  
W.M. Loh ◽  
P.J. Wright ◽  
T.A. Schreyer ◽  
S.E. Swirhun ◽  
K.C. Saraswat ◽  
...  

2015 ◽  
Vol 28 (3) ◽  
pp. 457-464
Author(s):  
Aaron Collins ◽  
Yue Pan ◽  
Anthony Holland

We present a numerical method to extract specific contact resistivity (SCR) for three-dimensional (3-D) contact structures using a two-electrode test structure. This method was developed using Finite Element Modeling (FEM). Experimental measurements were performed for contacts of 200 nm nickel (Ni) to p+-type germanium (Ge) substrates and 200 nm of Titanium (Ti) on 4H-Silicon Carbide (SiC). The SCR obtained was (2.3-27)?10-6 ??cm2 for the Ni-Ge contacts and (1.3-2.4)?10-3 ??cm2 for the Ti-SiC.


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