In Situ Study of Nb Oxide and Hydride for SRF Cavity Applications Using Aberration-Corrected STEM and Electron Energy Loss Spectroscopy

2013 ◽  
Vol 23 (3) ◽  
pp. 7100703-7100703
Author(s):  
R. Tao ◽  
R. F. Klie
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
In Situ Study ◽  
Aberration Corrected Stem ◽  
Electron Energy Loss ◽  
Srf Cavity ◽  
Aberration Corrected

scholarly journals In-situ study of Nb hydride for SRF cavity applications using aberration-corrected STEM and electron energy loss spectroscopy

2013 ◽  
Vol 19 (S2) ◽  
pp. 606-607
Author(s):  
R. Tao ◽  
R.F. Klie ◽  
L. Cooley ◽  
A. Romanenko
Keyword(s):  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
In Situ Study ◽  
Aberration Corrected Stem ◽  
Electron Energy Loss ◽  
Srf Cavity ◽  
Aberration Corrected

Extended abstract of a paper presented at Microscopy and Microanalysis 2013 in Indianapolis, Indiana, USA, August 4 – August 8, 2013.

scholarly journals In-Situ Study of Nb Oxide Thin Films Using Electron Energy Loss Spectroscopy

2011 ◽  
Vol 17 (S2) ◽  
pp. 798-799
Author(s):  
R Tao ◽  
R Klie ◽  
A Romanenko ◽  
L Cooley
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Oxide Thin Films ◽  
In Situ Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

In-situ study of Nb oxide and hydride on thin films using electron energy loss spectroscopy

2012 ◽  
Vol 18 (S2) ◽  
pp. 1624-1625
Author(s):  
R. Tao ◽  
R. Klie ◽  
A. Romanenko ◽  
L. Cooley
Keyword(s):  
Thin Films ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
In Situ Study ◽  
Electron Energy Loss

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Investigation of Switching Mechanism in HfO2-Based Oxide Resistive Memories by In-Situ Transmission Electron Microscopy and Electron Energy Loss Spectroscopy

2017 ◽  
Author(s):  
T. Dewolf ◽  
D. Cooper ◽  
N. Bernier ◽  
V. Delaye ◽  
A. Grenier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hafnium Dioxide ◽  
Switching Mechanism ◽  
Transmission Electron ◽  
Electron Energy Loss

Abstract Forming and breaking a nanometer-sized conductive area are commonly accepted as the physical phenomenon involved in the switching mechanism of oxide resistive random access memories (OxRRAM). This study investigates a state-of-the-art OxRRAM device by in-situ transmission electron microscopy (TEM). Combining high spatial resolution obtained with a very small probe scanned over the area of interest of the sample and chemical analyses with electron energy loss spectroscopy, the local chemical state of the device can be compared before and after applying an electrical bias. This in-situ approach allows simultaneous TEM observation and memory cell operation. After the in-situ forming, a filamentary migration of titanium within the dielectric hafnium dioxide layer has been evidenced. This migration may be at the origin of the conductive path responsible for the low and high resistive states of the memory.

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