The role of stacking faults in the enhancement of the a-b plane peak in silver ion- irradiated commercial MOD REBCO wires

2022 ◽  
pp. 1-1
Author(s):  
Arya Ambadiyil Soman ◽  
Stuart C Wimbush ◽  
Martin W Rupich ◽  
Christian Notthoff ◽  
Patrick Kluth ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Silver Ion

The Role of Phase Stability in Ductile, Ordered B2 Intermetallics

2006 ◽  
Vol 980 ◽  
Author(s):  
James R. Morris ◽  
Yiying Ye ◽  
Maja Krcmar ◽  
Chong Long Fu
Keyword(s):  
Phase Stability ◽  
First Principles ◽  
Tensile Ductility ◽  
Stacking Faults ◽  
Low Energy ◽  
First Principles Calculations ◽  
Phase Competition ◽  
Transformation Pathway ◽  
Shape Memory Materials

AbstractWe discuss the underlying atomistic mechanism for experimentally observed large tensile ductility in various strongly ordered B2 intermetallic compounds. First-principles calculations demonstrate that all of the compounds exhibit little energy differences between the B2, B27 and B33 phases. These calculations relate observations of ductility in YAg, YCu and ZrCo to shape-memory materials including NiTi. One transformation pathway between the B2 and B33 phases establishes a connection between this phase competition, and stacking faults on the {011}B2 plane. The low energy of such a stacking fault will lead to splitting of the b=<100> dislocations into b/2 partials, observed in ZrCo, TiCo, and in the B19' phase of NiTi. Calculations demonstrate that this pathway is competitive with the traditional pathway for NiTi.

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

The role of organic diluents in the aspects of equilibrium, kinetics and thermodynamic model for silver ion extraction using an extractant D2EHPA

2015 ◽  
Vol 388 ◽  
pp. 22-30 ◽  
Author(s):  
Thidarat Wongsawa ◽  
Niti Sunsandee ◽  
Anchaleeporn Waritswat Lothongkum ◽  
Ura Pancharoen ◽  
Suphot Phatanasri
Keyword(s):  
Thermodynamic Model ◽  
Silver Ion ◽  
Ion Extraction ◽  
Kinetics And Thermodynamic

The role of stacking faults and their associated 0.13 eV acceptor state in doped and undoped ZnO layers and nanostructures

2010 ◽  
Vol 247 (6) ◽  
pp. 1464-1468 ◽  
Author(s):  
K. Thonke ◽  
M. Schirra ◽  
R. Schneider ◽  
A. Reiser ◽  
G. M. Prinz ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Acceptor State

Genesis of Defects in Massively Transformed L10-ordered τ-MnAl Alloys

2000 ◽  
Vol 652 ◽  
Author(s):  
Cagatay Yanar ◽  
Velimir Radmilovic ◽  
William. A. Soffa ◽  
Jorg M. K. Wiezorek
Keyword(s):  
Solid State ◽  
Stacking Faults ◽  
Atomic Level ◽  
State Transformation ◽  
Solid State Transformation ◽  
Antiphase Boundaries ◽  
Growth Interface

ABSTRACTDefects produced in massively transformed L10-ordered τ-MnAl have been characterized by detailed TEM studies. The defect population in massive τ-MnAl comprises arrays of overlapping stacking faults, {111}-conjugated microtwins, thermal antiphase boundaries and dislocations. The genesis of these defects has been attributed to atomic attachment faulting on {111}- and {020}-type facets of the essentially incoherent growth interface between the parent and product phases. The features of the defect genesis in τ-MnAl are discussed with respect to the role of atomic level processes at solid-state transformation interfaces in general and growth interfaces in massively transforming materials systems in particular.

Role of interface chemistry and growing surface stoichiometry on the generation of stacking faults in ZnSe/GaAs

1997 ◽  
Vol 26 (2) ◽  
pp. 53-63 ◽  
Author(s):  
L. H. Kuo ◽  
K. Kimura ◽  
S. Miwa ◽  
T. Yasuda ◽  
T. Yao
Keyword(s):  
Stacking Faults ◽  
Interface Chemistry

Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices

1993 ◽  
Vol 63 (22) ◽  
pp. 3023-3025 ◽  
Author(s):  
S. Guha ◽  
J. M. DePuydt ◽  
J. Qiu ◽  
G. E. Hofler ◽  
M. A. Haase ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Stacking Faults ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Dislocation Sources
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