Role of stacking faults as misfit dislocation sources and nonradiative recombination centers in II‐VI heterostructures and devices

1993 ◽  
Vol 63 (22) ◽  
pp. 3023-3025 ◽  
Author(s):  
S. Guha ◽  
J. M. DePuydt ◽  
J. Qiu ◽  
G. E. Hofler ◽  
M. A. Haase ◽  
...  
Keyword(s):  
Misfit Dislocation ◽  
Stacking Faults ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Dislocation Sources

The Role of Misfit Dislocation During Epitaxial Growth

1987 ◽  
Vol 94 ◽  
Author(s):  
D. Cherns
Keyword(s):  
Misfit Dislocation ◽  
Lattice Spacing ◽  
Minimum Energy ◽  
Energy Criterion ◽  
Misfit Dislocations ◽  
Metal Metal ◽  
Correct Account ◽  
Pseudomorphic Growth ◽  
Dislocation Sources

ABSTRACTThe theory of Frank and van der Merwe (FM) in 1949 showed that a minimum energy criterion could explain the pseudomorphic growth of a deposit on a substrate of different lattice spacing and the subsequent relief of strain by misfit dislocations as the deposit thickness increases. Although the “equilibrium” theory is qualitatively correct, account must be taken of actual dislocation sources, which may be complex, and which may be more or less efficient for misfit relief than predicted by the FM model. Moreover, misfit dislocation sources may determine the morphology of the growing film, the interface topology and even the atomic structure of the deposit/substrate interface. These various roles of misfit dislocations are reviewed here with examples from work on metal/metal, semiconductor/semiconductor and metal/semiconductor systems.

scholarly journals Numerical Exploration of the Defect’s Effect on Mechanical Properties of Nanowires under Torsion

2011 ◽  
Vol 335-336 ◽  
pp. 498-501 ◽  
Author(s):  
Hai Fei Zhan ◽  
Yuan Tong Gu ◽  
Cheng Yan ◽  
Prasad K.D.V. Yarlagadda
Keyword(s):  
Mechanical Properties ◽  
Surface Defects ◽  
Torsional Rigidity ◽  
Stacking Faults ◽  
Md Simulations ◽  
Numerical Exploration ◽  
Deformation Processes ◽  
Dislocation Sources ◽  
Torsion Deformation

Molecular dynamics (MD) simulations have been carried out to investigate the defect’s effect on the mechanical properties of single-crystal copper nanowire with different surface defects, under torsion deformation. The torsional rigidity is found insensitive to the surface defects and the critical angle appears an obvious decrease due to the surface defects, the largest decrease is found for the nanowire with surface horizon defect. The deformation mechanism appears different degrees of influence due to surface defects. The surface defects play a role of dislocation sources. Comparing with single intrinsic stacking faults formation for the perfect nanowire, much affluent deformation processes have been activated because of surface defects, for instance, we find the twins formation for the nanowire with a surface 45odefect.

scholarly journals Exploration of the Defect’s Effect on the Mechanical Properties of Different Orientated Nanowires

2011 ◽  
Vol 328-330 ◽  
pp. 1239-1244 ◽  
Author(s):  
Hai Fei Zhan ◽  
Yuan Tong Gu
Keyword(s):  
Mechanical Properties ◽  
Surface Defect ◽  
Tensile Deformation ◽  
Stacking Faults ◽  
Md Simulations ◽  
Yield Strain ◽  
Small Influence ◽  
Dislocation Sources ◽  
Crystallographic Orientations

Molecular dynamics (MD) simulations have been carried out to investigate the defect’s effect on the mechanical properties of copper nanowire with different crystallographic orientations, under tensile deformation. Three different crystallographic orientations have been considered. The deformation mechanism has been carefully discussed. It is found that the Young’s modulus is insensitive to the defect, even when the nanowire’s crystallographic orientation is different. However, due to the defect’s effect, the yield strength and yield strain appear a large decrease. The defects have played a role of dislocation sources, the slips or stacking faults are first generated around the locations of the defects. The necking locations have also been affected by different defects. Due to the surface defect, the plastic deformation has received a large influence for the and orientated nanowires, and a relative small influence is seen for the nanowire.

Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency

2011 ◽  
Vol 98 (7) ◽  
pp. 072104 ◽  
Author(s):  
A. Y. Polyakov ◽  
N. B. Smirnov ◽  
A. V. Govorkov ◽  
H. Amano ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Light Emission ◽  
Nonradiative Recombination ◽  
Extended Defects ◽  
Emission Efficiency ◽  
Recombination Centers ◽  
Nonpolar Gan

scholarly journals Hidden role of Bi incorporation in nonradiative recombination in methylammonium lead iodide

2020 ◽  
Vol 8 (26) ◽  
pp. 12964-12967
Author(s):  
Xie Zhang ◽  
Jimmy-Xuan Shen ◽  
Mark E. Turiansky ◽  
Chris G. Van de Walle
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Lead Iodide ◽  
Recombination Centers ◽  
Methylammonium Lead Iodide

BiPb is not a recombination center in hybrid perovskites, but promotes the formation of the actual recombination centers—iodine interstitials.

Expansion of Stacking Faults by Electron-Beam Irradiation in 4H-SiC Diode Structure

2008 ◽  
Vol 600-603 ◽  
pp. 353-356 ◽  
Author(s):  
Ryuichi Sugie ◽  
Masanobu Yoshikawa ◽  
Shin Harada ◽  
Yasuo Namikawa
Keyword(s):  
Electron Beam ◽  
Driving Force ◽  
Electron Beam Irradiation ◽  
Stacking Faults ◽  
Geometric Shape ◽  
Nonradiative Recombination ◽  
Beam Irradiation ◽  
Nucleation Sites ◽  
Basal Plane Dislocation ◽  
Recombination Centers

The influence of electron-beam irradiation on defects in 4H-SiC diode structures was investigated by cathodoluminescence (CL) microscopy and spectroscopy. In addition to threading edge and screw dislocations, two types of stacking faults (SFs) were characterized by their emission energy, geometric shape, and the sensitivity of electron-beam irradiation. The SFs at λ = 425 nm (2.92 eV) expand from the surface of basal plane dislocation with line direction [11-20] and change their geometric shape by electron-beam irradiation. The SFs at λ = 471 nm (2.63 eV) are only slightly influenced by electron-beam irradiation. The former corresponds to the Shockley-type SFs previously observed in the degraded p-i-n diodes, and the latter to in-grown SFs with 8H structure. The panchromatic CL images constructed by the sum of monochromatic CL images suggest that there are nonradiative recombination centers in the vicinity of Shockley-type SFs. The nucleation sites and the driving force for SF expansion are discussed.

scholarly journals Role of dislocations in nitride laser diodes with different indium content

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Agata Bojarska-Cieślińska ◽  
Łucja Marona ◽  
Julita Smalc-Koziorowska ◽  
Szymon Grzanka ◽  
Jan Weyher ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Defect Density ◽  
Laser Diodes ◽  
Diffusion Path ◽  
Vapour Phase ◽  
Indium Content ◽  
Nonradiative Recombination ◽  
Light Emitters ◽  
Vapour Phase Epitaxy

AbstractIn this work we investigate the role of threading dislocations in nitride light emitters with different indium composition. We compare the properties of laser diodes grown on the low defect density GaN substrate with their counterparts grown on sapphire substrate in the same epitaxial process. All structures were produced by metalorganic vapour phase epitaxy and emit light in the range 383–477 nm. We observe that intensity of electroluminescence is strong in the whole spectral region for devices grown on GaN, but decreases rapidly for the devices on sapphire and emitting at wavelength shorter than 420 nm. We interpret this behaviour in terms of increasing importance of dislocation related nonradiative recombination for low indium content structures. Our studies show that edge dislocations are the main source of nonradiative recombination. We observe that long wavelength emitting structures are characterized by higher average light intensity in cathodoluminescence and better thermal stability. These findings indicate that diffusion path of carriers in these samples is shorter, limiting the amount of carriers reaching nonradiative recombination centers. According to TEM images only mixed dislocations open into the V-pits, usually above the multi quantum wells thus not influencing directly the emission.

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