Role of V-shaped stacking faults in Au/n-type ZnMgSSe:Cl Schottky diodes

1998 ◽  
Vol 16 (6) ◽  
pp. 3027
Author(s):  
Ching-Wu Wang
Keyword(s):  
Schottky Diodes ◽  
Stacking Faults

Electrical properties of planar AlGaN/GaN Schottky diodes: Role of 2DEG and analysis of non-idealities

2017 ◽  
Vol 121 (13) ◽  
pp. 135701 ◽  
Author(s):  
Anna Persano ◽  
Iolanda Pio ◽  
Vittorianna Tasco ◽  
Massimo Cuscunà ◽  
Adriana Passaseo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Diodes

Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 425-428 ◽  
Author(s):  
R.R Ciechonski ◽  
Samuele Porro ◽  
Mikael Syväjärvi ◽  
Rositza Yakimova
Keyword(s):  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Depth Profiling ◽  
Thermionic Emission ◽  
Barrier Heights ◽  
Transient Spectroscopy ◽  
State Resistance ◽  
Thick Layers

Specific on-resistance Ron estimated from current density-voltage characteristics of Schottky diodes on thick layers exhibits variations from tens of mW.cm2 to tens of W.cm2 for different doping levels. In order to understand the occurrence of high on-state resistance, Schottky barrier heights were first estimated for both forward and reverse bias with the application of thermionic emission theory and were in agreement with a literature reported values. Decrease in mobility with the temperature was observed and its dependencies of T–1.3 and T–2.0 for moderately doped and low doped samples respectively were estimated. From deep level measurements by Minority Carrier Transient Spectroscopy, an influence of shallow boron related levels and D-center on dependence of on-state resistance was observed, being more pronounced in low doped samples. Similar tendency was observed in depth profiling of Ron. This suggests a major role of boron in a compensation mechanism thus resulting in high Ron.

The role of stacking faults in the enhancement of the a-b plane peak in silver ion- irradiated commercial MOD REBCO wires

2022 ◽  
pp. 1-1
Author(s):  
Arya Ambadiyil Soman ◽  
Stuart C Wimbush ◽  
Martin W Rupich ◽  
Christian Notthoff ◽  
Patrick Kluth ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Silver Ion

scholarly journals Deep levels in n-type Schottky and p+-n homojunction GaN diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 922-928
Author(s):  
A. Hierro ◽  
D. Kwon ◽  
S. A. Ringel ◽  
M. Hansen ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Schottky Diodes ◽  
Yellow Luminescence ◽  
Arrhenius Behavior ◽  
Electron Level ◽  
Transient Spectroscopy ◽  
Electron And Hole Traps

The deep level spectra in both p+-n homojunction and n-type Schottky GaN diodes are studied by deep level transient spectroscopy (DLTS) in order to compare the role of the junction configuration on the defects found within the n-GaN layer. Both majority and minority carrier DLTS measurements are performed on the diodes allowing the observation of both electron and hole traps in n-GaN. An electron level at Ec−Et=0.58 and 0.62 V is observed in the p+-n and Schottky diodes, respectively, with a concentration of ∼3−4×1014 cm−3 and a capture cross section of ∼1−5×10−15 cm2. The similar Arrhenius behavior indicates that both emissions are related to the same defect. The shift in activation energy is correlated to the electric field enhanced-emission in the p+-n diode, where the junction barrier is much larger. The p+-n diode configuration allows the observation of a hole trap at Et−Ev=0.87 eV in the n-GaN which is very likely related to the yellow luminescence band.

The Role of Phase Stability in Ductile, Ordered B2 Intermetallics

2006 ◽  
Vol 980 ◽  
Author(s):  
James R. Morris ◽  
Yiying Ye ◽  
Maja Krcmar ◽  
Chong Long Fu
Keyword(s):  
Phase Stability ◽  
First Principles ◽  
Tensile Ductility ◽  
Stacking Faults ◽  
Low Energy ◽  
First Principles Calculations ◽  
Phase Competition ◽  
Transformation Pathway ◽  
Shape Memory Materials

AbstractWe discuss the underlying atomistic mechanism for experimentally observed large tensile ductility in various strongly ordered B2 intermetallic compounds. First-principles calculations demonstrate that all of the compounds exhibit little energy differences between the B2, B27 and B33 phases. These calculations relate observations of ductility in YAg, YCu and ZrCo to shape-memory materials including NiTi. One transformation pathway between the B2 and B33 phases establishes a connection between this phase competition, and stacking faults on the {011}B2 plane. The low energy of such a stacking fault will lead to splitting of the b=<100> dislocations into b/2 partials, observed in ZrCo, TiCo, and in the B19' phase of NiTi. Calculations demonstrate that this pathway is competitive with the traditional pathway for NiTi.

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

Zinc oxide: bulk growth, role of hydrogen and Schottky diodes

2009 ◽  
Vol 42 (15) ◽  
pp. 153001 ◽  
Author(s):  
E V Monakhov ◽  
A Yu Kuznetsov ◽  
B G Svensson
Keyword(s):  
Zinc Oxide ◽  
Schottky Diodes ◽  
Bulk Growth
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