Nondegeneracy Conditions for Active Memristive Circuits

2010 ◽  
Vol 57 (3) ◽  
pp. 223-227 ◽  
Author(s):  
R. Riaza
Electronics ◽  
2021 ◽  
Vol 10 (2) ◽  
pp. 181
Author(s):  
Ivo Marković ◽  
Milka Potrebić ◽  
Dejan Tošić

Digital potentiometers are substantial components for the design of many mixed-signal electronic circuits and systems. Their capability to program resistance value almost instantly provides hardware designers an additional level of freedom. Unfortunately, this feature is limited to DC and lower frequencies, due to parasitic effects. Nowadays, memristors as continuously tunable resistors are becoming candidates for potentiometer successors. Memristors are two-terminal non-volatile devices which have less significant parasitic effects and a wide resistance range. The memristance value can be changed on the fly. Using nanotechnology, memristor implementation has a nanoscale footprint with nanosecond transition between resistive states. In this paper, we present a comparison between the frequency characteristics of digital potentiometers and the only commercially available memristors. Memristor parasitic effects dominate at higher frequencies which extends the bandwidth. In order to present the advantages of memristive circuits, we have analyzed and implemented tunable circuits such as a voltage divider, an inverting amplifier, a high-pass filter, and a phase shifter. A commercially available memristor by KnowM Inc. is used for this purpose. Experimental results obtained by the measurements verify that a memristor has equal or better characteristics than a digital potentiometer. Memristive realizations of voltage dividers and inverting amplifiers have a wider bandwidth, while filters and phase shifters with a memristor have almost identical frequency characteristics as the corresponding realizations with a digital potentiometer.


Technologies ◽  
2018 ◽  
Vol 6 (4) ◽  
pp. 118 ◽  
Author(s):  
Francesco Caravelli ◽  
Juan Carbajal

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an internal parameter. We provide an brief historical introduction, as well as an overview over the physical mechanism that lead to memristive behavior. This review is meant to guide nonpractitioners in the field of memristive circuits and their connection to machine learning and neural computation.


Complexity ◽  
2018 ◽  
Vol 2018 ◽  
pp. 1-15 ◽  
Author(s):  
Dalibor Biolek ◽  
Zdeněk Biolek ◽  
Viera Biolková

The duality of nonlinear systems built from higher-order two-terminal Chua’s elements and independent voltage and current sources is analyzed. Two different approaches are now being generalized for circuits with higher-order elements: the classical duality principle, hitherto restricted to circuits built from R-C-L elements, and Chua’s duality of memristive circuits. The so-called storeyed structure of fundamental elements is used as an integrating platform of both approaches. It is shown that the combination of associated flip-type and shift-type transformations of the circuit elements can generate dual networks with interesting features. The regularities of the duality can be used for modeling, hardware emulation, or synthesis of systems built from elements that are not commonly available, such as memristors, via classical dual elements.


Author(s):  
Grigorios Tastzoglou ◽  
Vasileios Ntinas ◽  
Ioakeim G. Georgoudas ◽  
Angelos Amanatiadis ◽  
Georgios Ch. Sirakoulis

2016 ◽  
Vol 26 (13) ◽  
pp. 1650217 ◽  
Author(s):  
Fangfang Jiang ◽  
Zhicheng Ji ◽  
Qing-Guo Wang ◽  
Jitao Sun

In this paper, we consider a class of flux controlled memristive circuits with a piecewise linear memristor (i.e. the characteristic curve of the memristor is given by a piecewise linear function). The mathematical model is described by a discontinuous planar piecewise smooth differential system, which is defined on three zones separated by two parallel straight lines [Formula: see text] (called as discontinuity lines in discontinuous differential systems). We first investigate the stability of equilibrium points and the existence and uniqueness of a crossing limit cycle for the memristor-based circuit under self-excited oscillation. We then analyze the existence of periodic orbits of forced nonlinear oscillation for the memristive circuit with an external exciting source. Finally, we give numerical simulations to show good matches between our theoretical and simulation results.


2016 ◽  
Vol 26 (04) ◽  
pp. 1650064 ◽  
Author(s):  
Ignacio García de la Vega ◽  
Ricardo Riaza

This paper addresses a systematic characterization of saddle-node bifurcations in nonlinear electrical and electronic circuits. Our approach is a circuit-theoretic one, meaning that the bifurcation is analyzed in terms of the devices’ characteristics and the graph-theoretic properties of the digraph underlying the circuit. The analysis is based on a reformulation of independent interest of the saddle-node theorem of Sotomayor for semiexplicit index one differential-algebraic equations (DAEs), which define the natural context to set up nonlinear circuit models. The bifurcation is addressed not only for classical circuits, but also for circuits with memristors. The presence of this device systematically leads to nonisolated equilibria, and in this context the saddle-node bifurcation is shown to yield a bifurcation of manifolds of equilibria; in cases with a single memristor, this phenomenon describes the splitting of a line of equilibria into two, with different stability properties.


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