Dynamic Molecular Switches Drive Negative Memristance Mimicking Synaptic Behavior

To realize molecular scale electrical operations beyond the von Neumann bottleneck, new types of multi-functional switches are needed that mimic self-learning or neuromorphic computing by dynamically toggling between multiple operations that depend on their past. Here we report a molecule that switches from high to low conductance states with massive negative memristive behavior that depends on the drive speed and the number of past switching events. This dynamic molecular switch emulates synaptic behavior and Pavlovian learning and can provide all of the fundamental logic gates because of its time-domain and voltage-dependent plasticity. This multi-functional switch represents molecular scale hardware operable in solid-state devices opening a pathway to dynamic complex electrical operations encoded within a single ultra-compact component.

Analog Memristive Characteristics of Square Shaped Lanthanum Oxide Nanoplates Layered Device

Square-shaped or rectangular nanoparticles (NPs) of lanthanum oxide (LaOx) were synthesized and layered by convective self-assembly to demonstrate an analog memristive device in this study. Along with non-volatile analog memory effect, selection diode property could be co-existent without any implementation of heterogeneous multiple stacks with ~1 μm thick LaOx NPs layer. Current–voltage (I–V) behavior of the LaOx NPs resistive switching (RS) device has shown an evolved current level with memristive behavior and additional rectification functionality with threshold voltage. The concurrent memristor and diode type selector characteristics were examined with electrical stimuli or spikes for the duration of 10–50 ms pulse biases. The pulsed spike increased current levels at a read voltage of +0.2 V sequentially along with ±7 V biases, which have emulated neuromorphic operation of long-term potentiation (LTP). This study can open a new application of rare-earth LaOx NPs as a component of neuromorphic synaptic device.

Conductivity and Memristive Behavior of Completely Charged Domain Walls in Reduced Bidomain Lithium Niobate

Among many materials considered for use in domain-wall nanoelectronics, lithium niobate (LiNbO3, LN) is one of the most technological and physically stable. Compared with many other reports where inclined domain...

An artificial synaptic transistor using an α-In2Se3 van der Waals ferroelectric channel for pattern recognition

Despite being widely investigated for their memristive behavior, ferroelectrics are barely studied as channel materials in field-effect transistor (FET) configurations.