Quantum Simulation Study of a New Carbon Nanotube Field-Effect Transistor With Electrically Induced Source/Drain Extension

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2009.2015458 ◽

2009 ◽

Vol 9 (2) ◽

pp. 237-243 ◽

Author(s):

Z. Arefinia ◽

A.A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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Impact of Temperature Variation on Performance of Carbon Nanotube Field-Effect Transistor—Based on Chaotic Oscillator: A Quantum Simulation Study

Chinese Physics Letters ◽

10.1088/0256-307x/32/3/038201 ◽

2015 ◽

Vol 32 (3) ◽

pp. 038201 ◽

Author(s):

Ha Nguyen Van ◽

Song Hanjung

Keyword(s):

Carbon Nanotube ◽

Temperature Variation ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Chaotic Oscillator ◽

Effect Transistor

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Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.07.003 ◽

2008 ◽

Vol 41 (2) ◽

pp. 196-201 ◽

Author(s):

Zahra Arefinia ◽

Ali A. Orouji

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study

IEEE Sensors Journal ◽

10.1109/jsen.2019.2894440 ◽

2019 ◽

Vol 19 (9) ◽

pp. 3314-3321 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Performance Assessment ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Effect Transistor

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain

Superlattices and Microstructures ◽

10.1016/j.spmi.2019.106239 ◽

2020 ◽

Vol 138 ◽

pp. 106239 ◽

Author(s):

Soheila Moghaddam ◽

Seyed Saleh Ghoreishi ◽

Reza Yousefi ◽

Habib Aderang

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Torsional Strain ◽

Effect Transistor

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Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2008.10.005 ◽

2009 ◽

Vol 41 (4) ◽

pp. 552-557 ◽

Author(s):

Ali A. Orouji ◽

Zahra Arefinia

Keyword(s):

Carbon Nanotube ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Detailed Simulation ◽

Effect Transistor ◽

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Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode

Superlattices and Microstructures ◽

10.1016/j.spmi.2019.02.001 ◽

2019 ◽

Vol 128 ◽

pp. 252-259 ◽

Author(s):

Khalil Tamersit

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Quantum Simulation ◽

Metal Alloy ◽

Gate Electrode ◽

Binary Metal ◽

Effect Transistor

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Semiconducting - Carbon Nanotube Field Effect Transistor Based Logic Gates

i-manager’s Journal on Electronics Engineering ◽

10.26634/jele.1.4.1512 ◽

2011 ◽

Vol 1 (4) ◽

pp. 56-60

Author(s):

V. Saravanan ◽

V. Kannan

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Logic Gates ◽

Effect Transistor

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Effects of Differing Carbon Nanotube Field-effect Transistor Architectures

10.21236/ada502660 ◽

2009 ◽

Author(s):

Andrew M. Dorsey ◽

Matthew H. Ervin

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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An Analogue Multiplier Using Carbon Nanotube Field-effect Transistor Technology

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04022 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04022-1-04022-5

Author(s):

Seyedehsomayeh Hatefinasab ◽

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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