Stark Effects Model Used to Highlight Selective Activation of Failure Mechanisms in MQW InGaN/GaN Light-Emitting Diodes
2010 ◽
Vol 10
(1)
◽
pp. 164-170
◽
Keyword(s):
2008 ◽
Vol 48
(8-9)
◽
pp. 1354-1360
◽
1997 ◽
Vol 85
(1-3)
◽
pp. 1213-1214
◽
Keyword(s):
Keyword(s):
2015 ◽
Vol 12
(1/2)
◽
pp. 38
◽
Keyword(s):
Keyword(s):
2011 ◽
Vol 11
(2)
◽
pp. 303-311
◽
Keyword(s):
2011 ◽
Vol 51
(9-11)
◽
pp. 1806-1809
◽