1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual
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56

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11

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0780335759

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New understanding of LDD CMOS hot-carrier degradation and device lifetime at cryogenic temperatures

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584280 ◽

2002 ◽

Author(s):

J. Wang-Ratkovic ◽

R.C. Lacoe ◽

K.P. MacWilliams ◽

Miryeong Song ◽

S. Brown ◽

...

Keyword(s):

Cryogenic Temperatures ◽

Hot Carrier ◽

Device Lifetime ◽

Hot Carrier Degradation

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Degradation in (Ba,Sr)TiO/sub 3/ thin films under DC and dynamic stress conditions

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584242 ◽

2002 ◽

Author(s):

T. Horikawa ◽

T. Kawahara ◽

M. Yamamuka ◽

K. Ono

Keyword(s):

Dynamic Stress ◽

Stress Conditions

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Life tests and failure mechanisms of GaN/AlGaN/InGaN light emitting diodes

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584273 ◽

2002 ◽

Author(s):

D.L. Barton ◽

M. Osinski ◽

P. Perlin ◽

C.J. Helms ◽

N.H. Berg

Keyword(s):

Light Emitting Diodes ◽

Failure Mechanisms ◽

Light Emitting ◽

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Device degradation due to stud bumping above the MOSFET region and the effect of annealing on the degradation

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584247 ◽

2002 ◽

Author(s):

N. Shimoyama ◽

K. Machida ◽

M. Shimaya ◽

H. Akiya ◽

H. Kyuragi

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Short-timescale thermal mapping of interconnects

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584281 ◽

2002 ◽

Author(s):

Yongho Sungtaek Ju ◽

K.E. Goodson

Keyword(s):

Thermal Mapping ◽

Short Timescale

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Effect of Al-W intermetallic compounds on electromigration in Al/CVD-W interconnects

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584264 ◽

2002 ◽

Author(s):

M. Sekiguchi ◽

M. Yamanaka ◽

S. Mayumi

Keyword(s):

Intermetallic Compounds

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Via delamination-a novel electromigration failure mechanism

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584261 ◽

2002 ◽

Author(s):

Y.-H. Lee ◽

K. Wu ◽

N. Mielke ◽

L.J. Ma ◽

S. Hui

Keyword(s):

Failure Mechanism

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Effect of texture on the electromigration of CVD copper

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584260 ◽

2002 ◽

Author(s):

Changsup Ryu ◽

A.L.S. Loke ◽

T. Nogami ◽

S.S. Wong

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Characterization of bitline stress effects on flash cell after program/erase cycle

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584244 ◽

2002 ◽

Author(s):

V.C. Liu ◽

J.C. Guo ◽

K.L. Chang ◽

C.I. Huang ◽

M.T. Wang ◽

...

Keyword(s):

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Enhancement of hot-carrier induced degradation under low gate voltage stress due to hydrogen for NMOSFETs with SiN films

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584279 ◽

2002 ◽

Author(s):

S. Tokitoh ◽

H. Uchida ◽

K. Shibusawa ◽

N. Murakami ◽

T. Nakamura ◽

...

Keyword(s):

Gate Voltage ◽

Hot Carrier ◽

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