Exploring failure mechanisms of near ultraviolet AlGaN/GaN light-emitting diodes by reverse-bias stress in water vapour

2015 ◽  
Vol 12 (1/2) ◽  
pp. 38 ◽  
Author(s):  
Hsiang Chen ◽  
Huan Yu Shen ◽  
Shih Chang Shei ◽  
Nai Chung Kang ◽  
Hung Che Lai ◽  
...  
Keyword(s):  
Water Vapour ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Failure Mechanisms ◽  
Light Emitting ◽  
Bias Stress ◽  
Near Ultraviolet

Damage of light-emitting diodes induced by high reverse-bias stress

2009 ◽  
Vol 311 (3) ◽  
pp. 994-997 ◽  
Author(s):  
N.C. Chen ◽  
Y.N. Wang ◽  
Y.S. Wang ◽  
W.C. Lien ◽  
Y.C. Chen
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Bias Stress ◽  
High Reverse Bias

Degradation of AlGaN/GaN Light Emitting Diodes caused by Carbon Contamination with Reverse-bias Stress Test in Water Vapor

2016 ◽  
Vol 19 (1) ◽  
pp. 011-013
Author(s):  
Hsiang Chen ◽  
Yun Yang He ◽  
Min Han Lin ◽  
Shang Ren Lin ◽  
Sheng-Hao Hung ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Ion Beam ◽  
Stress Test ◽  
Forward Bias ◽  
X Ray Diffraction ◽  
Carbon Contamination ◽  
Light Emitting ◽  
Bias Stress ◽  
Focus Ion Beam

Resolving failure origins of AlGaN/GaN light emitting diodes (LED) has received intensive study recently. In this study, formation of GaCO3 caused by carbon contamination may result in deformation of the electrode near the surface and degrade the device. The electrochemical reactions may cause device damages. Degradation in electrical properties is observed in I-V characteristics. Forward-bias and reverse-bias EL images are used to trace the damaged areas. Furthermore, focus ion beam (FIB), scanning electron microscope (SEM), energy dispersive X-ray diffraction (EDX) are applied to examine the damaged areas. Results indicate that formation of GaCO3 may deform the electrode, generate the reverse-bias EL and cause the degradation.

Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

2014 ◽  
Vol 116 (9) ◽  
pp. 094505 ◽  
Author(s):  
Hsiang Chen ◽  
Yu-Cheng Chu ◽  
Shih-Chang Shei ◽  
Yun-Ti Chen ◽  
Chian-You Chen
Keyword(s):  
Water Vapor ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Bias Stress

A novel near-ultraviolet-light excitable Eu3+-doped Sr2LaTaO6 red phosphor for white-light-emitting diodes

Optik ◽  
2021 ◽  
Vol 240 ◽  
pp. 166908
Author(s):  
Qifeng Tang ◽  
Tao Yang ◽  
Haifeng Huang ◽  
Jinqing Ao ◽  
Biyou Peng ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Red Phosphor ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
White Light Emitting Diodes

Investigation of device failure mechanisms in polymer light-emitting diodes

1997 ◽  
Vol 85 (1-3) ◽  
pp. 1213-1214 ◽  
Author(s):  
Ramesh K. Kasim ◽  
Yang Cheng ◽  
Martin Pomerantz ◽  
Ronald L. Elsenbaumer
Keyword(s):  
Light Emitting Diodes ◽  
Failure Mechanisms ◽  
Light Emitting ◽  
Device Failure ◽  
Polymer Light Emitting Diodes

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

2003 ◽  
Vol 83 (24) ◽  
pp. 4906-4908 ◽  
Author(s):  
Satoshi Watanabe ◽  
Norihide Yamada ◽  
Masakazu Nagashima ◽  
Yusuke Ueki ◽  
Chiharu Sasaki ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Light Emitting ◽  
Highly Efficient ◽  
Near Ultraviolet ◽  
Ultraviolet Light Emitting Diodes
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