SOI n-MOSFET low-frequency noise measurements and modeling from room temperature up to 250°C

2002 ◽  
Vol 49 (7) ◽  
pp. 1289-1295 ◽  
Author(s):  
V. Dessard ◽  
B. Iniguez ◽  
S. Adriaensen ◽  
D. Flandre
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Measurements

scholarly journals Generation Recombination Noise in GaN Photoconducting Detectors

1999 ◽  
Vol 4 (S1) ◽  
pp. 817-822
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

Low frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generationrecombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

Generation Recombination Noise in GaN Photoconducting Detectors

1998 ◽  
Vol 537 ◽  
Author(s):  
M. Misra ◽  
D. Doppalapudi ◽  
A.V. Sampath ◽  
T.D. Moustakas ◽  
P.H. McDonald
Keyword(s):  
Room Temperature ◽  
Low Frequency ◽  
Optical Excitation ◽  
Noise Spectrum ◽  
High Resistivity ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
Deep Traps ◽  
Noise Measurements

AbstractLow frequency noise measurements are a powerful tool for detecting deep traps in semiconductor devices and investigating trapping-recombination mechanisms. We have performed low frequency noise measurements on a number of photoconducting detectors fabricated on autodoped n-GaN films grown by ECR-MBE. At room temperature, the noise spectrum is dominated by 1/f noise and thermal noise for low resistivity material and by generation-recombination (G-R) noise for high resistivity material. Noise characteristics were measured as a function of temperature in the 80K to 300K range. At temperatures below 150K, 1/f noise is dominant and at temperatures above 150K, G-R noise is dominant. Optical excitation revealed the presence of traps not observed in the dark, at room temperature.

scholarly journals LOW-FREQUENCY NOISE MEASUREMENTS OF IR PHOTODETECTORS WITH VOLTAGE CROSS CORRELATION SYSTEM

Measurement ◽  
2021 ◽  
pp. 109867
Author(s):  
Krzysztof ACHTENBERG ◽  
Janusz MIKOŁAJCZYK ◽  
Carmine CIOFI ◽  
Graziella SCANDURRA ◽  
Krystian MICHALCZEWSKI ◽  
...  
Keyword(s):  
Cross Correlation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Ir Photodetectors ◽  
Noise Measurements ◽  
Correlation System

Low-Frequency Noise Measurements as a Quality Indicator for Ohmic Contacts to n-GaN

2003 ◽  
Vol 433-436 ◽  
pp. 677-680 ◽  
Author(s):  
Nobuhisa Tanuma ◽  
Hirokazu Tanizaki ◽  
Saburo Yokokura ◽  
T. Matsui ◽  
Sumihisa Hashiguchi ◽  
...  
Keyword(s):  
Quality Indicator ◽  
Ohmic Contacts ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Measurements
Sign in / Sign up

Export Citation Format

Share Document