Gate oxide thickness dependence of edge charge trapping in nmos transistors caused by charge injection under constant-current stress

2003 ◽  
Vol 50 (6) ◽  
pp. 1548-1550 ◽  
Author(s):  
T.P. Chen ◽  
Jiayi Huang ◽  
M.S. Tse ◽  
S.S. Tan ◽  
C.H. Ang
Keyword(s):  
Charge Injection ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Constant Current ◽  
Current Stress ◽  
Gate Oxide Thickness ◽  
Nmos Transistors

Characterization of Hole Traps Generated by Electron Injection in Thin SiO2 Films

1997 ◽  
Vol 473 ◽  
Author(s):  
Tomasz Brożek ◽  
Eric B. Lum ◽  
Chand R. Viswanathan
Keyword(s):  
Charge Trapping ◽  
Gate Oxide ◽  
Electron Injection ◽  
Oxide Thickness ◽  
Hole Injection ◽  
Kinetics Parameters ◽  
Hole Trapping ◽  
Gate Oxide Thickness ◽  
Injection Dose

ABSTRACTMOS device stability can be significantly affected by charge trapping in the gate oxide, which changes device parameters and causes serious reliability problems in transistors and memory cells. Hole traps, generated by high-field electron injection, are studied in this work in devices with thermal oxides less than 10 nm thick. PMOS transistors, after various doses of positive and negative Fowler-Nordheim injection and post-stress annealing, are subjected to substrate hot hole injection to investigate hole trapping kinetics. Parameters of hole traps, generated under the stress, are studied as a function of gate oxide thickness and electron injection dose.

Gate oxide thickness dependence of the leakage current mechanism in Ru/Ta2O5/SiON/Si structures

2010 ◽  
Vol 25 (7) ◽  
pp. 075007 ◽  
Author(s):  
M Ťapajna ◽  
A Paskaleva ◽  
E Atanassova ◽  
E Dobročka ◽  
K Hušeková ◽  
...  
Keyword(s):  
Leakage Current ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Gate Oxide Thickness ◽  
Leakage Current Mechanism ◽  
Current Mechanism

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

1990 ◽  
Vol 37 (6) ◽  
pp. 1496-1503 ◽  
Author(s):  
Y. Toyoshima ◽  
H. Iwai ◽  
F. Matsuoka ◽  
H. Hayashida ◽  
K. Maeguchi ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Hot Carrier ◽  
Gate Oxide Thickness ◽  
Thin Gate Oxide

Gate Oxide Thickness Dependence of Hot Carrier Induced Degradation on PMOSFETs

ESSDERC ’89 ◽  
1989 ◽  
pp. 732-735 ◽  
Author(s):  
Y. Hiruta ◽  
H. Oyamatsu ◽  
H. S. Momose ◽  
H. Iwai ◽  
K. Maeguchi
Keyword(s):  
Gate Oxide ◽  
Oxide Thickness ◽  
Thickness Dependence ◽  
Hot Carrier ◽  
Gate Oxide Thickness
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