Characterization of mixed-signal properties of MOSFETs with high-k (SiON/HfSiON/TaN) gate stacks

2006 ◽  
Vol 53 (5) ◽  
pp. 1216-1225 ◽  
Author(s):  
Z.M. Rittersma ◽  
M. Vertregt ◽  
W. Deweerd ◽  
S. van Elshocht ◽  
P. Srinivasan ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Mixed Signal ◽  
High K

A novel approach to characterization of progressive breakdown in high-k/metal gate stacks

2008 ◽  
Vol 48 (11-12) ◽  
pp. 1759-1764 ◽  
Author(s):  
R. Pagano ◽  
S. Lombardo ◽  
F. Palumbo ◽  
P. Kirsch ◽  
S.A. Krishnan ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Novel Approach ◽  
High K

(Invited) Voltage Ramp Stress Based Stress-And-Sense Test Method For Reliability Characterization of Hf-Base High-k/Metal Gate Stacks For CMOS Technologies

2019 ◽  
Vol 41 (3) ◽  
pp. 337-348 ◽  
Author(s):  
Eduard Cartier ◽  
Adreas Kerber ◽  
Siddarth Krishnan ◽  
Barry Linder ◽  
Takashi Ando ◽  
...  
Keyword(s):  
Test Method ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K ◽  
Voltage Ramp

Spectroscopic ellipsometry characterization of high-k gate stacks with Vt shift layers

2011 ◽  
Vol 519 (9) ◽  
pp. 2889-2893 ◽  
Author(s):  
Ming Di ◽  
Eric Bersch ◽  
Robert Clark ◽  
Steven Consiglio ◽  
Gert Leusink ◽  
...  
Keyword(s):  
Spectroscopic Ellipsometry ◽  
Gate Stacks ◽  
High K

Characterization of Inversion-Layer Capacitance of Electrons in High- $k$/Metal Gate Stacks

2010 ◽  
Vol 57 (11) ◽  
pp. 2814-2820 ◽  
Author(s):  
Ryosuke Iijima ◽  
Lisa F. Edge ◽  
Vamsi Paruchuri ◽  
Mariko Takayanagi
Keyword(s):  
Inversion Layer ◽  
Gate Stacks ◽  
Metal Gate ◽  
High K

In depth characterization of electrical effects of dopants (Al, La, Mg, N) in high-k/metal gate stacks

2011 ◽  
Author(s):  
G. Reimbold ◽  
M. Cassé ◽  
X. Garros ◽  
C. Leroux ◽  
M. Charbonnier ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
High K
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