2008 IEEE International Reliability Physics Symposium
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175
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9781424420490
Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Modeling of DMOS subjected to fast temperature cycle stress and improvement by a novel metallization concept

2008 ◽  
Author(s):  
Tobias Smorodin ◽  
Jurgen Wilde ◽  
Peter Nelle ◽  
Erica Lilleodden ◽  
Matthias Stecher
Keyword(s):  
Temperature Cycle

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 ◽  
Author(s):  
Ahmad Ehteshamul Islam ◽  
Vrajesh D. Maheta ◽  
Hitesh Das ◽  
Souvik Mahapatra ◽  
Muhammad Ashraful Alam
Keyword(s):  
Interface Traps ◽  
Mobility Degradation

A novel characterization method to monitor process damage for transistors

2008 ◽  
Author(s):  
Soichiro Kitazaki ◽  
Yoshinori Kumura ◽  
Susumu Shuto ◽  
Tohru Ozaki ◽  
Takeshi Hamamoto ◽  
...  
Keyword(s):  
Process Damage

Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches

2008 ◽  
Author(s):  
Augusto Tazzoli ◽  
Vanni Peretti ◽  
Enrico Autizi ◽  
Gaudenzio Meneghesso
Keyword(s):  
Rf Mems

Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories

2008 ◽  
Author(s):  
Ziyuan Liu ◽  
Tomoya Saito ◽  
Tomoko Matsuda ◽  
Koichi Ando ◽  
Shu Ito ◽  
...  
Keyword(s):  
Hydrogen Distribution ◽  
Data Retention ◽  
Nitride Oxide
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