2008 IEEE International Reliability Physics Symposium

2008 ◽

Author(s):

Eric Ng ◽

Edmund Poh ◽

David Lam ◽

Zheng Xinhua

Keyword(s):

Failure Mechanism ◽

High Resistance ◽

Mechanism Study

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Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558950 ◽

2008 ◽

Author(s):

Kun Lin ◽

Chia Hung Chao ◽

Tsui-Hua Huang ◽

Hsiu-Mei Fan ◽

Shey-Shi Lu

Keyword(s):

Energy Loss ◽

Failure Analysis ◽

Failure Mechanism ◽

Electron Energy ◽

Electron Energy Loss Spectrum ◽

Electron Energy Loss

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Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558998 ◽

2008 ◽

Author(s):

Ziyuan Liu ◽

Tomoya Saito ◽

Tomoko Matsuda ◽

Koichi Ando ◽

Shu Ito ◽

...

Keyword(s):

Hydrogen Distribution ◽

Data Retention ◽

Nitride Oxide

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A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558888 ◽

2008 ◽

Cited By ~ 3

Author(s):

P.J. Liao ◽

Chia Lin Chen ◽

J.W. Young ◽

Y.S. Tsai ◽

C.J. Wang ◽

...

Keyword(s):

Drain Bias ◽

Lifetime Model ◽

Thin Oxide

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Modeling of DMOS subjected to fast temperature cycle stress and improvement by a novel metallization concept

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558990 ◽

2008 ◽

Cited By ~ 9

Author(s):

Tobias Smorodin ◽

Jurgen Wilde ◽

Peter Nelle ◽

Erica Lilleodden ◽

Matthias Stecher

Keyword(s):

Temperature Cycle

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Mobility degradation due to interface traps in plasma oxynitride PMOS devices

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558868 ◽

2008 ◽

Cited By ~ 31

Author(s):

Ahmad Ehteshamul Islam ◽

Vrajesh D. Maheta ◽

Hitesh Das ◽

Souvik Mahapatra ◽

Muhammad Ashraful Alam

Keyword(s):

Interface Traps ◽

Mobility Degradation

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A novel characterization method to monitor process damage for transistors

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4559005 ◽

2008 ◽

Author(s):

Soichiro Kitazaki ◽

Yoshinori Kumura ◽

Susumu Shuto ◽

Tohru Ozaki ◽

Takeshi Hamamoto ◽

...

Keyword(s):

Process Damage

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Impact of IC wafer fab and assembly fab processes on package stress induced product reliability issues - an insight into the package stress relief design rules by simulation

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558928 ◽

2008 ◽

Author(s):

Y. Li ◽

M.A.J. van Gils ◽

W.D. van Driel ◽

R.B.R. van Silfhout ◽

J. Bisschop ◽

...

Keyword(s):

Stress Relief ◽

Product Reliability ◽

Design Rules ◽

Wafer Fab ◽

Insight Into

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Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558938 ◽

2008 ◽

Author(s):

Augusto Tazzoli ◽

Vanni Peretti ◽

Enrico Autizi ◽

Gaudenzio Meneghesso

Keyword(s):

Rf Mems

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New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications

2008 IEEE International Reliability Physics Symposium ◽

10.1109/relphy.2008.4558891 ◽

2008 ◽

Cited By ~ 2

Author(s):

V. Martinez ◽

C. Besset ◽

F. Monsieur ◽

D. Ney ◽

L. Montes ◽

...

Keyword(s):

Leakage Current ◽

Reliability Assessment ◽

Industrial Applications ◽

Tantalum Pentoxide ◽

Metal Insulator ◽

Self Heating ◽

Metal Insulator Metal ◽

Insight Into ◽

Mim Capacitors

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2008 IEEE International Reliability Physics Symposium
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Failure mechanism study for high resistance gate contact in dram devices for 2008 IRPS

Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis

Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories

A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

Modeling of DMOS subjected to fast temperature cycle stress and improvement by a novel metallization concept

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

A novel characterization method to monitor process damage for transistors

Impact of IC wafer fab and assembly fab processes on package stress induced product reliability issues - an insight into the package stress relief design rules by simulation

Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches

New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications

Export Citation Format

2008 IEEE International Reliability Physics SymposiumLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Failure mechanism study for high resistance gate contact in dram devices for 2008 IRPS

Electron energy loss spectrum application for failure mechanism investigation in semiconductor failure analysis

Hydrogen distribution in oxide-nitride-oxide stacks and correlation with data retention of MONOS memories

A new on-state drain-bias TDDB lifetime model and HCI effect on drain-bias TDDB of ultra thin oxide

Modeling of DMOS subjected to fast temperature cycle stress and improvement by a novel metallization concept

Mobility degradation due to interface traps in plasma oxynitride PMOS devices

A novel characterization method to monitor process damage for transistors

Impact of IC wafer fab and assembly fab processes on package stress induced product reliability issues - an insight into the package stress relief design rules by simulation

Suspensions shape impact on the reliability of ohmic RF-MEMS redundancy switches

New insight into tantalum pentoxide Metal-Insulator-Metal (MIM) capacitors: Leakage current modeling, self-heating, reliability assessment and industrial applications

2008 IEEE International Reliability Physics Symposium
Latest Publications