A Program for Device Model Parameter Extraction from Gate Capacitance and Current of Ultrathin$hboxSiO_2$and High-$kappa$Gate Stacks

2006 ◽  
Vol 53 (9) ◽  
pp. 2118-2127 ◽  
Author(s):  
F. Li ◽  
L.F. Register ◽  
M.M. Hasan ◽  
S.K. Banerjee
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