Suppression of Dynamic On-Resistance Increase and Gate Charge Measurements in High-Voltage GaN-HEMTs With Optimized Field-Plate Structure

2007 ◽  
Vol 54 (8) ◽  
pp. 1825-1830 ◽  
Author(s):  
W. Saito ◽  
T. Nitta ◽  
Y. Kakiuchi ◽  
Y. Saito ◽  
K. Tsuda ◽  
...  
Keyword(s):  
High Voltage ◽  
Plate Structure ◽  
Field Plate ◽  
Resistance Increase ◽  
Gan Hemts ◽  
Gate Charge

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

2010 ◽  
Vol 31 (7) ◽  
pp. 659-661 ◽  
Author(s):  
Wataru Saito ◽  
Yorito Kakiuchi ◽  
Tomohiro Nitta ◽  
Yasunobu Saito ◽  
Takao Noda ◽  
...  
Keyword(s):  
High Voltage ◽  
Structure Dependence ◽  
Plate Structure ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

Novel field plate structure of AlGaN/GaN HEMTs

2007 ◽  
Vol 4 (7) ◽  
pp. 2736-2739 ◽  
Author(s):  
Akira Nakajima ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts

A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs

2006 ◽  
Author(s):  
Young-Hwan Choi ◽  
Min-Woo Ha ◽  
Jiyong Lim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts

Suppression of Current Collapse of High-Voltage AlGaN/GaN HFETs on Si Substrates by Utilizing a Graded Field-Plate Structure

2012 ◽  
Vol E95.C (8) ◽  
pp. 1343-1347 ◽  
Author(s):  
Tadayoshi DEGUCHI ◽  
Hideshi TOMITA ◽  
Atsushi KAMADA ◽  
Manabu ARAI ◽  
Kimiyoshi YAMASAKI ◽  
...  
Keyword(s):  
High Voltage ◽  
Plate Structure ◽  
Si Substrates ◽  
Field Plate ◽  
Current Collapse
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