A New Field Plate Structure for Suppression of Leakage Current of AlGaN/GaN HEMTs

2006 ◽  
Author(s):  
Young-Hwan Choi ◽  
Min-Woo Ha ◽  
Jiyong Lim ◽  
Min-Koo Han
Keyword(s):  
Leakage Current ◽  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts

Novel field plate structure of AlGaN/GaN HEMTs

2007 ◽  
Vol 4 (7) ◽  
pp. 2736-2739 ◽  
Author(s):  
Akira Nakajima ◽  
Mitsuaki Shimizu ◽  
Hajime Okumura
Keyword(s):  
Plate Structure ◽  
Field Plate ◽  
Gan Hemts

scholarly journals Reduction in reverse leakage current of diamond vertical Schottky barrier diode using SiNX field plate structure

2019 ◽  
Vol 13 ◽  
pp. 102250 ◽  
Author(s):  
Dan Zhao ◽  
Zhangcheng Liu ◽  
Juan Wang ◽  
Wenyang Yi ◽  
Ruozheng Wang ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Schottky Barrier Diode ◽  
Plate Structure ◽  
Field Plate ◽  
Reverse Leakage Current

Field-Plate Structure Dependence of Current Collapse Phenomena in High-Voltage GaN-HEMTs

2010 ◽  
Vol 31 (7) ◽  
pp. 659-661 ◽  
Author(s):  
Wataru Saito ◽  
Yorito Kakiuchi ◽  
Tomohiro Nitta ◽  
Yasunobu Saito ◽  
Takao Noda ◽  
...  
Keyword(s):  
High Voltage ◽  
Structure Dependence ◽  
Plate Structure ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts

High Voltage AlGaN/GaN HEMTs Employing a Tapered Field Plate

2009 ◽  
Vol 615-617 ◽  
pp. 971-974 ◽  
Author(s):  
Young Hwan Choi ◽  
Ji Yong Lim ◽  
Kyu Heon Cho ◽  
Young Shil Kim ◽  
Min Koo Han
Keyword(s):  
Leakage Current ◽  
Breakdown Voltage ◽  
Depletion Region ◽  
Wet Etching ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Gate Leakage ◽  
Field Plate ◽  
Gan Hemts ◽  
Gate Edge

AlGaN/GaN HEMTs employing a tapered field plate, which decreases the gate leakage current and improves the breakdown voltage without any sacrifice of the forward electrical characteristics were proposed and fabricated. The tapered structure was fabricated by the wet etching process. The depletion region of the proposed structure expands toward the slope of the tapered field plate and the electric field concentration at the gate edge can be successfully suppressed. The gate leakage current of proposed device at VGS= -5 V and VDS= 100 V was decreased by 2-3 orders compared with that of the conventional one. The breakdown voltage of proposed device was 880 V while that of conventional one was 548 V.

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