Thickness-Optimized Multilevel Resistive Switching of Silver Programmable Metallization Cells With Stacked SiO<sub><italic>x</italic></sub>/SiO<sub>2</sub> Solid Electrolytes

2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

Analysis of current compliance on resistive switching of silver programmable metallization cells with stacked SiOx/SiO2 solid electrolytes

10.1109/ipfa.2015.7224455 ◽

2015 ◽

Author(s):

Jer-Chyi Wang ◽

Chun-Hsiang Chiu ◽

Ya-Ting Chan ◽

Chao-Sung Lai

Keyword(s):

Resistive Switching ◽

Solid Electrolytes ◽

Current Compliance ◽

Effects of bottom electrode on resistive switching of silver programmable metallization cells with Gd x O y /Al x O y solid electrolytes

Vacuum ◽

10.1016/j.vacuum.2016.09.018 ◽

2017 ◽

Vol 140 ◽

pp. 30-34 ◽

Cited By ~ 5

Author(s):

Ya-Ting Chan ◽

Wei-Fan Chen ◽

Jer-Chyi Wang ◽

Chao-Sung Lai

Keyword(s):

Resistive Switching ◽

Solid Electrolytes ◽

Bottom Electrode ◽

(Invited) Programmable Metallization Cells in Memory and Switching Applications

ECS Transactions ◽

10.1149/05805.0047ecst ◽

2013 ◽

Vol 58 (5) ◽

pp. 47-52 ◽

Cited By ~ 10

Author(s):

M. N. Kozicki ◽

P. Dandamudi ◽

H. J. Barnaby ◽

Y. Gonzalez-Velo

Keyword(s):

Electrochemically prepared oxides for resistive switching memories

Faraday Discussions ◽

10.1039/c8fd00112j ◽

2019 ◽

Vol 213 ◽

pp. 165-181 ◽

Cited By ~ 6

Author(s):

A. Zaffora ◽

F. Di Quarto ◽

H. Habazaki ◽

I. Valov ◽

M. Santamaria

Keyword(s):

Resistive Switching ◽

Solid Electrolytes

Electrochemically grown anodic oxides of different compositions and properties were tested as solid electrolytes for resistive switching memories.

Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells

IEEE Transactions on Nuclear Science ◽

10.1109/tns.2013.2286318 ◽

2013 ◽

Vol 60 (6) ◽

pp. 4563-4569 ◽

Cited By ~ 27

Author(s):

Y. Gonzalez-Velo ◽

H. J. Barnaby ◽

M. N. Kozicki ◽

P. Dandamudi ◽

A. Chandran ◽

...

Keyword(s):

Resistance Switching ◽

Total Ionizing Dose ◽

Dose Effects ◽

Switching Characteristics ◽

Total Ionizing Dose Effects ◽

Programmable Metallization Cells in Memory and Switching Applications

ECS Meeting Abstracts ◽

10.1149/ma2013-02/27/1990 ◽

2013 ◽

Keyword(s):

A physical-based simulation for the dynamic behavior of photodoping mechanism in chalcogenide materials used in the lateral programmable metallization cells

Solid State Ionics ◽

10.1016/j.ssi.2016.04.002 ◽

2016 ◽

Vol 290 ◽

pp. 1-5 ◽

Cited By ~ 21

Author(s):

Mehdi Saremi

Keyword(s):

Dynamic Behavior ◽

Materials Used ◽

Chalcogenide Materials ◽

Impedance Measurement and Characterization of Ag-Ge30Se70-Based Programmable Metallization Cells

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2358573 ◽

2014 ◽

Vol 61 (11) ◽

pp. 3723-3730 ◽

Cited By ~ 10

Author(s):

Debayan Mahalanabis ◽

Yago Gonzalez-Velo ◽

Hugh J. Barnaby ◽

Michael N. Kozicki ◽

Pradeep Dandamudi ◽

...

Keyword(s):

Impedance Measurement ◽

A CMOS-compatible electronic synapse device based on Cu/SiO2/W programmable metallization cells

Nanotechnology ◽

10.1088/0957-4484/27/25/255202 ◽

2016 ◽

Vol 27 (25) ◽

pp. 255202 ◽

Cited By ~ 36

Author(s):

Wenhao Chen ◽

Runchen Fang ◽

Mehmet B Balaban ◽

Weijie Yu ◽

Yago Gonzalez-Velo ◽

...

Keyword(s):

Cmos Compatible ◽

Metallization Cells ◽

Electronic Synapse

Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

ACS Applied Materials & Interfaces ◽

10.1021/acsami.7b10407 ◽

2017 ◽

Vol 9 (42) ◽

pp. 37031-37040 ◽

Cited By ~ 2

Author(s):

Jer-Chyi Wang ◽

Ya-Ting Chan ◽

Wei-Fan Chen ◽

Ming-Chung Wu ◽

Chao-Sung Lai

Keyword(s):

Resistive Switching ◽

Metal Electrode ◽

Interface Modification ◽

Trilayer Graphene ◽