Interface Modification of Bernal- and Rhombohedral-Stacked Trilayer-Graphene/Metal Electrode on Resistive Switching of Silver Electrochemical Metallization Cells

2017 ◽  
Vol 9 (42) ◽  
pp. 37031-37040 ◽  
Author(s):  
Jer-Chyi Wang ◽  
Ya-Ting Chan ◽  
Wei-Fan Chen ◽  
Ming-Chung Wu ◽  
Chao-Sung Lai
Keyword(s):  
Resistive Switching ◽  
Metal Electrode ◽  
Interface Modification ◽  
Trilayer Graphene ◽  
Metallization Cells

Effect of thickness of metal electrode on the performance of SiNx-based resistive switching devices

2019 ◽  
Vol 114 (4) ◽  
pp. 042102 ◽  
Author(s):  
Zhen Fei Zhang ◽  
Hai Xia Gao ◽  
Mei Yang ◽  
Peng Fei Jiang ◽  
Xiao Hua Ma ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Electrode ◽  
Switching Devices

INTERFACE ENGINEERING IN RESISTIVE SWITCHING MEMORIES

2011 ◽  
Vol 01 (02) ◽  
pp. 141-162 ◽  
Author(s):  
SHENG-YU WANG ◽  
TSEUNG-YUEN TSENG
Keyword(s):  
Resistive Switching ◽  
Memory Performance ◽  
Random Access ◽  
Metal Electrode ◽  
Interface Layer ◽  
Digital Data ◽  
Interface Engineering ◽  
Device Structure ◽  
Ongoing Research ◽  
Operation Speed

Electric-induced resistive switching effects have attracted wide attention for future nonvolatile memory applications known as resistive random access memory (RRAM). RRAM is one of the promising candidates because of its excellent properties including simple device structure, high operation speed, low power consumption and high density integration. The RRAM devices primarily utilize different resistance values to store the digital data and can keep the resistance state without any power. Recent advances in the understanding of the resistive switching mechanism are described by a thermal or electrochemical redox reaction near the interface between the oxide and the active metal electrode. This paper reviews the ongoing research and development activities on the interface engineering of the RRAM devices. The possible switching mechanisms for the bistable resistive switching are described. The effects of formation, composition and thickness of the interface layer on the resistive switching characteristics and consequently the memory performance are also discussed.

Investigation of the Resistive Switching Mechanisms and Rectification Characteristics of HfO2-Based Resistive Random Access Memory Devices with Different Electrode Materials

2020 ◽  
Vol 20 (10) ◽  
pp. 6489-6494
Author(s):  
Batkhuyag Khorolsuren ◽  
Shenmin Lu ◽  
Chao Sun ◽  
Fang Jin ◽  
Wenqin Mo ◽  
...  
Keyword(s):  
Noble Metal ◽  
Resistive Switching ◽  
Electrode Materials ◽  
Metal Electrode ◽  
Ion Migration ◽  
Resistive Layer ◽  
Switching Mechanism ◽  
Oxygen Ion ◽  
Oxygen Ion Migration ◽  
Resistive Switching Mechanism

To study the substitutability of noble metal electrodes in memristors, the effect of Pt/HfO2/Ti structure on the replacement of noble metal electrode Pt by different electrodes was studied. Compared with the unsubstituted devices, the HfO2-based RRAM devices with TiN and TiOxNy electrodes devices showed good resistive switching performance and resistive switching mechanism under oxygen ion migration. Five devices were prepared, and their resistive switching mechanism under oxygen ion migration was investigated. Moreover, besides the resistive switching phenomenon of these RRAM devices, it was found that significant rectifying characteristics were exhibited in a highresistance state (HRS). This phenomenon can be explained by regulation of the Schottky barrier of the interface between the top electrode and the resistive layer, which can be influenced by the migration of oxygen vacancies.

Nonvolatile resistive switching characteristics of HfO2 with Cu doping

2008 ◽  
Vol 1071 ◽  
Author(s):  
Weihua Guan ◽  
Shibing Long ◽  
Ming Liu ◽  
Wei Wang
Keyword(s):  
Resistive Switching ◽  
Hafnium Oxide ◽  
Nonvolatile Memory ◽  
Metal Electrode ◽  
Electron Beam Evaporation ◽  
Switching Behavior ◽  
Cu Doping ◽  
Low Resistance ◽  
Switching Characteristics ◽  
Memory Applications

AbstractIn this work, resistive switching characteristics of hafnium oxide (HfO2) with Cu doping prepared by electron beam evaporation are investigated for nonvolatile memory applications. The top metal electrode/ hafnium oxide doped with Cu/n+ Si structure shows two distinct resistance states (high-resistance and low-resistance) in DC sweep mode. By applying a proper bias, resistance switching from one state to the other state can be achieved. Though the ratio of high/low resistance is less than an order, the switching behavior is very stable and uniform with nearly 100% device yield. No data loss is found upon continuous readout for more than 104 s. The role of the intentionally introduced Cu impurities in the resistive switching behavior is investigated. HfO2 films with Cu doping are promising to be used in the nonvolatile resistive switching memory devices.

New Resistive Switching Phenomena in Devices with Limited Active Metal Source

2013 ◽  
Vol 1562 ◽  
Author(s):  
Mohini Verma ◽  
Yuhong Kang ◽  
Tanmay Potnis ◽  
Sushil Khadka ◽  
Tong Liu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Metal Electrode ◽  
Switching Behavior ◽  
Negative Bias ◽  
Direct Impact ◽  
Device Structure ◽  
Metal Source ◽  
Voltage Polarity ◽  
Active Metal ◽  
Limited Supply

ABSTRACTTo better understand the mechanisms of creation and rupture of conductive filaments in resistive switching devices such as Cu/TaOx/Pt, with Cu and Pt being the active and inert electrodes, respectively, a device with limited supply of active metal electrode has been manufactured and electrically characterized. The limited supply of active metal has been realized by depositing a thin (delta) Cu layer (δ-Cu), 6 nm and 12 nm thick, on TaOx, resulting in a Pt/δ-Cu/TaOx/Pt device structure. The limited active metal supply i) has a direct impact on the onresistance (Ron) of the Cu bridge, and leads, after several conventional set-reset cycles, to ii) pulsating behavior, when device turns on and off repeatedly, to iii) symmetric switching behavior with respect to applied voltage polarity, when the device can be set and reset both at positive and negative bias, and to iv) volatile switching behavior.

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