Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes With Composition-Graded Configuration

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2761404 ◽

2017 ◽

Vol 64 (12) ◽

pp. 4980-4984 ◽

Author(s):

Jih-Yuan Chang ◽

Hui-Tzu Chang ◽

Ya-Hsuan Shih ◽

Fang-Ming Chen ◽

Man-Fang Huang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Carrier Confinement ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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High-Efficiency Deep-Ultraviolet Light-Emitting Diodes With Efficient Carrier Confinement and High Light Extraction

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2887074 ◽

2019 ◽

Vol 66 (2) ◽

pp. 976-982 ◽

Author(s):

Jih-Yuan Chang ◽

Bo-Ting Liou ◽

Man-Fang Huang ◽

Ya-Hsuan Shih ◽

Fang-Ming Chen ◽

...

Keyword(s):

Ultraviolet Light ◽

High Efficiency ◽

Light Emitting Diodes ◽

Light Extraction ◽

Light Emitting ◽

Carrier Confinement ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Improved Wave Function Overlap and Carrier Confinement of AlGaN‐Based Deep‐Ultraviolet Light‐Emitting Diodes with Graded Composition Multiple Quantum Wells

physica status solidi (a) ◽

10.1002/pssa.202000779 ◽

2021 ◽

pp. 2000779

Author(s):

Fu-an Xiao ◽

Xu Liang ◽

Wen-jie Liu ◽

Xiao-long Hu

Keyword(s):

Wave Function ◽

Quantum Wells ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Light Emitting ◽

Carrier Confinement ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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265 nm AlGaN-based deep-ultraviolet light-emitting diodes grown on AlN substrates studied by photoluminescence spectroscopy under ideal pulsed selective and non-selective excitation conditions

Applied Physics Express ◽

10.35848/1882-0786/abb86f ◽

2020 ◽

Vol 13 (10) ◽

pp. 102005 ◽

Author(s):

Ryota Ishii ◽

Akira Yoshikawa ◽

Kazuhiro Nagase ◽

Mitsuru Funato ◽

Yoichi Kawakami

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Selective Excitation ◽

Photoluminescence Spectroscopy ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes ◽

Excitation Conditions

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Milliwatt power AlGaN-based deep ultraviolet light emitting diodes by plasma-assisted molecular beam epitaxy

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.200903400 ◽

2010 ◽

Vol 4 (1-2) ◽

pp. 49-51 ◽

Author(s):

Yitao Liao ◽

Christos Thomidis ◽

Chen-kai Kao ◽

Adam Moldawer ◽

Wei Zhang ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Ultraviolet Light ◽

Molecular Beam ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Carrier Velocity Modulation by Asymmetrical Concave Quantum Barriers to Improve the Performance of AlGaN-Based Deep Ultraviolet Light Emitting Diodes

IEEE Photonics Journal ◽

10.1109/jphot.2020.3047846 ◽

2021 ◽

Vol 13 (1) ◽

pp. 1-8

Author(s):

J. Lang ◽

F. J. Xu ◽

Y. H. Sun ◽

N. Zhang ◽

J. M. Wang ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Velocity Modulation ◽

Deep Ultraviolet ◽

Carrier Velocity ◽

Ultraviolet Light Emitting Diodes

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Designing anti-trapezoidal electron blocking layer for the amelioration of AlGaN-based deep ultraviolet light-emitting diodes internal quantum efficiency

Optik ◽

10.1016/j.ijleo.2021.166528 ◽

2021 ◽

Vol 232 ◽

pp. 166528

Author(s):

Muhammad Usman ◽

Tariq Jamil ◽

Shahzeb Malik ◽

Habibullah Jamal

Keyword(s):

Ultraviolet Light ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Internal Quantum Efficiency ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Electrical determination of current injection and internal quantum efficiencies in AlGaN-based deep-ultraviolet light-emitting diodes

Optics Express ◽

10.1364/oe.25.00a639 ◽

2017 ◽

Vol 25 (16) ◽

pp. A639 ◽

Author(s):

Guo-Dong Hao ◽

Naoki Tamari ◽

Toshiyuki Obata ◽

Toru Kinoshita ◽

Shin-ichiro Inoue

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Current Injection ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Advantages of AlGaN-based deep ultraviolet light-emitting diodes with a superlattice electron blocking layer

Superlattices and Microstructures ◽

10.1016/j.spmi.2015.05.010 ◽

2015 ◽

Vol 85 ◽

pp. 59-66 ◽

Author(s):

Pai Sun ◽

Xianglong Bao ◽

Songqing Liu ◽

Chunya Ye ◽

Zhaorong Yuan ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Blocking Layer ◽

Electron Blocking Layer ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Investigation of quantum structure in N-polar deep-ultraviolet light-emitting diodes

Journal of Applied Physics ◽

10.1063/5.0042712 ◽

2021 ◽

Vol 129 (13) ◽

pp. 133102

Author(s):

Hongfeng Jia ◽

Huabin Yu ◽

Yang Kang ◽

Zhongjie Ren ◽

Muhammad Hunain Memon ◽

...

Keyword(s):

Ultraviolet Light ◽

Light Emitting Diodes ◽

Quantum Structure ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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Effect of Barrier Height on Modulation Characteristics of AlGaN-based Deep Ultraviolet Light-emitting Diodes

Chinese Journal of Luminescence ◽

10.37188/cjl.20210331 ◽

2022 ◽

Vol 43 (01) ◽

pp. 1-7

Author(s):

Liang GUO ◽

◽

Ya-nan GUO ◽

Jian-kun YANG ◽

Jian-chang YAN ◽

...

Keyword(s):

Barrier Height ◽

Ultraviolet Light ◽

Light Emitting Diodes ◽

Light Emitting ◽

Deep Ultraviolet ◽

Ultraviolet Light Emitting Diodes

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