A New Approach for VDMOSFETs’ Gate Oxide Degradation Based on Capacitance and Subthreshold Current Measurements Under Constant Electrical Stress

2018 ◽  
Vol 65 (4) ◽  
pp. 1650-1652
Author(s):  
Hatice Gul Sezgin-Ugranli ◽  
Yasin Ozcelep
Author(s):  
Dann Morillon ◽  
Pascal Masson ◽  
Franck Julien ◽  
Philippe Lorenzini ◽  
Jerome Goy ◽  
...  

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry

Author(s):  
Minghang Xie ◽  
Pengju Sun ◽  
Kaihong Wang ◽  
Quanming Luo ◽  
Xiong Du

1996 ◽  
Vol 17 (6) ◽  
pp. 288-290 ◽  
Author(s):  
T. Brozek ◽  
Y.D. Chan ◽  
C.R. Viswanathan
Keyword(s):  

1999 ◽  
Author(s):  
Pitsini Mongkolkachit ◽  
Bharat L. Bhuva ◽  
Sharad Prasad ◽  
N. Bui ◽  
Sherra E. Kerns

Sign in / Sign up

Export Citation Format

Share Document