Two Capacitance States Memory Characteristic in Metal–Oxide–Semiconductor Structure Controlled by an Outer MOS-Gate Ring

2019 ◽  
Vol 66 (3) ◽  
pp. 1249-1254
Author(s):  
Hao-Jyun Li ◽  
Chang-Feng Yang ◽  
Jenn-Gwo Hwu
2015 ◽  
Vol 107 (17) ◽  
pp. 173501 ◽  
Author(s):  
M. S. Aksenov ◽  
A. Yu. Kokhanovskii ◽  
P. A. Polovodov ◽  
S. F. Devyatova ◽  
V. A. Golyashov ◽  
...  

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