Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

2020 ◽  
Vol 67 (9) ◽  
pp. 3740-3744
Author(s):  
Dionysios Stefanakis ◽  
Xilun Chi ◽  
Takuya Maeda ◽  
Mitsuaki Kaneko ◽  
Tsunenobu Kimoto
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

Experimental determination of impact ionization coefficients in

1983 ◽  
Vol 4 (6) ◽  
pp. 181-185 ◽  
Author(s):  
G.E. Bulman ◽  
V.M. Robbins ◽  
K.F. Brennan ◽  
K. Hess ◽  
G.E. Stillman
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

Experimental determination of impact ionization coefficients in 4H-SiC

2011 ◽  
Vol 20 (3) ◽  
pp. 395-397 ◽  
Author(s):  
D.M. Nguyen ◽  
C. Raynaud ◽  
N. Dheilly ◽  
M. Lazar ◽  
D. Tournier ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients

Experimental Determination of the Impact Ionization Coefficients in Irradiated Silicon

2011 ◽  
Vol 58 (4) ◽  
pp. 2091-2096 ◽  
Author(s):  
Andrea Cristofoli ◽  
Pierpaolo Palestri ◽  
Mario Paolo Giordani ◽  
Vladimir Cindro ◽  
Gian-Franco Dalla Betta ◽  
...  
Keyword(s):  
Experimental Determination ◽  
Impact Ionization ◽  
Ionization Coefficients ◽  
The Impact

Determination of Impact Ionization Coefficients Measured from 4H Silicon Carbide Avalanche Photodiodes

2007 ◽  
Vol 556-557 ◽  
pp. 339-342 ◽  
Author(s):  
W.S. Loh ◽  
C. Mark Johnson ◽  
J.S. Ng ◽  
Peter M. Sandvik ◽  
Steve Arthur ◽  
...  
Keyword(s):  
Impact Ionization ◽  
Avalanche Photodiodes ◽  
Submicron Devices ◽  
Illuminating Light ◽  
Factor Data ◽  
Ionization Coefficients ◽  
P Type ◽  
Dark Currents ◽  
The Impact

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

1992 ◽  
Vol 61 (7) ◽  
pp. 825-827 ◽  
Author(s):  
J. W. Cockburn ◽  
M. S. Skolnick ◽  
J. P. R. David ◽  
R. Grey ◽  
G. Hill ◽  
...  
Keyword(s):  
Low Temperature ◽  
Impact Ionization ◽  
Temperature Impact ◽  
Ionization Coefficients ◽  
Barrier Tunneling
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