The determination of impact ionization coefficients in (100) gallium arsenide using avalanche noise and photocurrent multiplication measurements

Hole initiated avalanche multiplication characteristics of 4H-SiC avalanche photodiodes have been studied. The diodes had n+-n-p SiC epitaxial layers grown on a p-type substrate. These 1 mm2 devices had very low dark currents and exhibited sharp breakdown at voltages of approximately 500V. The diodes multiplication characteristics appeared to be identical when the wavelength of the illuminating light from the top varied from 288 to 325nm, implying that almost pure hole initiated multiplication was occurring. The multiplication factor data were modelled using a local multiplication model with impact ionization coefficients of 4H-SiC reported by various authors. The impact ionization coefficients extracted from submicron devices by Ng et al. were found to give accurate predictions for multiplication factors within the uncertainties of the doping levels. This result suggests that their ionization coefficients can be applied to thicker bulk 4H-SiC structures.

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Determination of impact ionization coefficients in InP by analysis of photomultiplication and noise measurements

10.1109/iedm.1981.190066 ◽

1981 ◽

Cited By ~ 2

Author(s):

G.E. Bulman ◽

L.W. Cook ◽

M.M. Tashima ◽

G.E. Stillman

Keyword(s):

Impact Ionization ◽

Noise Measurements ◽

Ionization Coefficients

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Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3012118 ◽

2020 ◽

Vol 67 (9) ◽

pp. 3740-3744

Author(s):

Dionysios Stefanakis ◽

Xilun Chi ◽

Takuya Maeda ◽

Mitsuaki Kaneko ◽

Tsunenobu Kimoto

Keyword(s):

Experimental Determination ◽

Impact Ionization ◽

Ionization Coefficients

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Experimental determination of impact ionization coefficients in

IEEE Electron Device Letters ◽

10.1109/edl.1983.25697 ◽

1983 ◽

Vol 4 (6) ◽

pp. 181-185 ◽

Cited By ~ 107

Author(s):

G.E. Bulman ◽

V.M. Robbins ◽

K.F. Brennan ◽

K. Hess ◽

G.E. Stillman

Keyword(s):

Experimental Determination ◽

Impact Ionization ◽

Ionization Coefficients

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Determination of low temperature impact ionization coefficients in GaAs by electroluminescence measurements on single barrier tunneling structures

Applied Physics Letters ◽

10.1063/1.107757 ◽

1992 ◽

Vol 61 (7) ◽

pp. 825-827 ◽

Cited By ~ 4

Author(s):

J. W. Cockburn ◽

M. S. Skolnick ◽

J. P. R. David ◽

R. Grey ◽

G. Hill ◽

...

Keyword(s):

Low Temperature ◽

Impact Ionization ◽

Temperature Impact ◽

Ionization Coefficients ◽

Barrier Tunneling

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OBIC Measurements on Avalanche Diodes in 4H-SiC for the Determination of Impact Ionization Coefficients

Materials Science Forum ◽

10.4028/www.scientific.net/msf.717-720.545 ◽

2012 ◽

Vol 717-720 ◽

pp. 545-548 ◽

Cited By ~ 6

Author(s):

D.M. Nguyen ◽

Christophe Raynaud ◽

Mihai Lazar ◽

Gontran Pâques ◽

Sigo Scharnholz ◽

...

Keyword(s):

Electric Field ◽

Light Source ◽

Impact Ionization ◽

Optical Beam ◽

Induced Current ◽

Carrier Injection ◽

Field Range ◽

Avalanche Diodes ◽

Ionization Coefficients

Optical Beam Induced Current (OBIC) measurements have been performed on 4H-SiC avalanche diodes with very thin and highly doped avalanche region. The light source used in this study is an Ar-laser with a wavelength of 351 nm which results in a mixed carrier injection. From these measurements, impact ionization coefficients for 4H-SiC have been extracted in the electric field range from 3 to 4.8 MV/cm. In combination with ionization coefficients in our previous paper extracted from diodes with lowly doped avalanche region, we propose a set of parameters of impact ionization coefficients for 4H-SiC, applicable to a wide electric field range.

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