Direct Conversion X-ray Detectors with 70 pA/cm2 Dark Currents Coated from an Alcohol-based Perovskite Ink

Direct conversion x-ray image detectors offer higher spatial resolution than their indirect counterparts. Organic-inorganic hybrid perovskites are among the most sensitive x-ray photoconductors for these detectors; however, high dark currents...

Photodetector devices based on PIN and barrier structures of the mid-wave IR range of the spectrum

Multilayer structures based on the antimonide group materials with absorber layers InSb or AlxIn1-XSb, and XBn-structures with AlxIn1-XSb barrier layer (InSb/AlxIn1-XSb/InSb), designed for the manufacture of advanced photosensitive devices detecting radiation in the medium-wave infrared (IR) range (MWIR), have been developed and investigated. Various topology photosensitive elements (PSE) with absorbing layers InSb or AlxIn1-XSb were fabricated on the basis of MBE-grown p–i–n and barrier structures. It is shown that wideband ternary al-loys AlxIn1-XSb are considered as an alternative to the narrowband binary compound InSb, since, due to wide-band material properties, photodiodes based on AlxIn1-XSb have lower dark currents, and, consequently, noise. The average values of detectivity D* and noise-equivalent temperature difference (NETD) have been measured for various topology photodetectors, so D* was more than 1011 cmW-1Hz1/2 in p–i–n-structures, and D* exceed of 1012 cmW-1Hz1/2 in barrier structures.

Physics of Nanostructure Design for Infrared Detectors

Infrared detectors and focal plane array technologies are becoming ubiquitous in military, but are limited in the commercial sectors. The widespread commercial use of this technology is lacking because of the high cost and large size, weight and power. Most of these detectors require cryogenic cooling to minimize thermally generated dark currents, causing the size, weight, power and cost to increase significantly. Approaches using very thin detector design can minimize thermally generated dark current, but at a cost of lower absorption efficiency. There are emerging technologies in nanostructured material designs such as metasurfaces that can allow for increased photon absorption in a thin detector architecture. Ultra-thin and low-dimensional absorber materials may also provide unique engineering opportunities in detector design. This chapter discusses the physics and opportunities to increase the operating temperature using such techniques.

High-performance HgCdTe avalanche photodetector enabled with suppression of band-to-band tunneling effect in mid-wavelength infrared

HgCdTe avalanche photodiodes promise various fascinating applications due to the outstanding capability of detecting weak signals or even single photon. However, the underlying transport mechanisms of diverse dark current components are still unresolved at high reverse bias, thus limiting the development of high-performance devices. Here, we establish an accurate model to demonstrate the competitive mechanism between band-to-band and avalanche dark currents in positive-intrinsic-negative structures. Based on the high consistency between the simulated and measured results, we find that both components jointly dominate overall dark current but with a larger avalanche current. This breaks the conventional cognition that band-to-band dark current contributes the majority. With the guidance, we reconstruct an optimized device and achieve gain 1876 (6153) and dark current 10−10 (10−9) A at bias −10 (−10.5) V, respectively. Comparisons of dark current and gain with reported single-element devices further confirm the outstanding performance of our device.

Ultra-fast germanium photodiode with 3-dB bandwidth of 265 GHz

On a scalable silicon technology platform, we demonstrate photodetectors matching or even surpassing state-of-the-art III–V devices. As key components in high-speed optoelectronics, photodetectors with bandwidths greater than 100 GHz have been a topic of intense research for several decades. Solely InP-based detectors could satisfy the highest performance specifications. Devices based on other materials, such as germanium-on-silicon devices, used to lag behind in speed, but enabled complex photonic integrated circuits and co-integration with silicon electronics. Here we demonstrate waveguide-coupled germanium photodiodes with optoelectrical 3-dB bandwidths of 265 GHz and 240 GHz at a photocurrent of 1 mA. This outstanding performance is achieved by a novel device concept in which a germanium fin is sandwiched between complementary in situ-doped silicon layers. Our photodetectors show internal responsivities of 0.3 A W−1 (265 GHz) and 0.45 A W−1 (240 GHz) at a wavelength of 1,550 nm. The internal bandwidth–efficiency product of the latter device is 86 GHz. Low dark currents of 100–200 nA are obtained from these ultra-fast photodetectors.

Optoelectrical Operation Stability of Broadband PureGaB Ge-on-Si Photodiodes with Anomalous Al-Mediated Sidewall Contacting

An anomalous aluminum-mediated material transport process was investigated in sets of Ge-on-Si photodiodes with broadband optoelectrical characteristics measured at wavelengths from 255 nm to 1550 nm. The diodes had “PureGaB” anode regions fabricated by depositing a Ga wetting layer capped with an 11-nm-thick B-layer on 0.5 µm-thick Ge islands grown on Si. The Al metallization was able to reach the Ge-Si interface through ~ 0.1-µm-wide holes inadvertently etched along the perimeter of the Ge-islands, and then traveled along the Ge-Si interface, displacing and recrystallizing Ge and Si. The rest of the Ge surface was protected from the Al contact metallization by the B-layer. For diodes that had received the standard 400°C Al alloying step, the responsivity was near-theoretical at 406 nm and 670 nm, but, at 1310 nm and 1550 nm, the proximity of Ge-Si interfacial defects caused significant attenuation. Extra annealing at 400°C or 500°C enhanced the formation of Si pits that were filled with modified Ge crystals alloyed with Si and p-doped with Al. All these diodes maintained low dark currents, below 50 µA/cm2 at 2 V reverse bias, but the responsivity was degraded, particularly for the long wavelengths. On the other hand, neither responsivity nor degradation of current–voltage (I–V) characteristics was observed for prolonged exposure to normal operating temperatures up to 100°C. Since the direct Al contacting of the Ge sidewalls does not degrade the dark current, for large diodes it could be a low-cost method of obtaining low contact resistance to an anode with p-type sidewall passivation and high fill-factor.

Terahertz Photoconductive Antenna Based on a Topological Insulator Nanofilm

In this study, the efficient generation of terahertz radiation by a dipole photoconductive antenna, based on a thin island film of a topological insulator, was experimentally demonstrated. The performance of the Bi1.9Sb0.1Te2Se antenna was shown to be no worse than those of a semiconductor photoconductive antenna, which is an order of magnitude thicker. The current–voltage characteristics were studied for the photo and dark currents in Bi1.9Sb0.1Te2Se. The possible mechanisms for generating terahertz waves were analyzed by comparing the characteristics of terahertz radiation of an electrically biased and unbiased topological insulator.