Miniature Strip Transmission Line for Microwave Applications

1955 ◽  
Vol 3 (2) ◽  
pp. 57-64
Author(s):  
J.W.E. Griemsmann ◽  
E.N. Torgow
1993 ◽  
Vol 1 (10-12) ◽  
pp. 1633-1643
Author(s):  
W. Rauch ◽  
A.A. Valenzuela ◽  
G. Sölkner ◽  
F. Fox ◽  
H. Behner ◽  
...  

2019 ◽  
Vol 11 (3) ◽  
pp. 244-254
Author(s):  
Mohamed Karim Azizi ◽  
Taieb Elbellili ◽  
Henri Baudrand ◽  
Hichem Trabelsi

AbstractIn this paper, we propose a novel study of zero-index materials (ZIM) based on lumped element circuits using a wave concept iterative method (WCIP). This method is well used to demonstrate the behavior of zero-index-based microwave applications. This type of metamaterial can maintain the amplitude and the phase of an electromagnetic wave to be constant through the ZIM region, which is an important property to design an in-phase power divider-combiner, enhance the directivity of an embedded source, channel electromagnetic waves without reflection at the interface between waveguides with different cross-sections, and control the transmission of electromagnetic wave by the adjustment of the permittivity of a dielectric defect coated by zero-index metamaterial. The numerical simulations using the WCIP method match the literature and commercial software simulator results.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


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