High-Efficiency 1-, 2-, and 4-W Class-B FET Power Amplifiers

1986 ◽  
Vol 34 (12) ◽  
pp. 1318-1326 ◽  
Author(s):  
J.R. Lane ◽  
R.G. Freitag ◽  
Hyo-Kun Hahn ◽  
J.E. Degenford ◽  
M. Cohn
2009 ◽  
Vol 57 (4) ◽  
pp. 881-889 ◽  
Author(s):  
Seok Joo Doo ◽  
P. Roblin ◽  
V. Balasubramanian ◽  
R. Taylor ◽  
K. Dandu ◽  
...  

2003 ◽  
Vol 51 (2) ◽  
pp. 643-652 ◽  
Author(s):  
V. Paidi ◽  
Shouxuan Xie ◽  
R. Coffie ◽  
B. Moran ◽  
S. Heikman ◽  
...  

Author(s):  
Tuan Anh Vu ◽  
Tuan Dinh Pham ◽  
Duong Gia Bach

This paper presents high-efficiency high-gain 2.4 GHz power amplifiers (PAs) for wireless communications. Two class-B PAs are designed and verified in 0.13 µm CMOS mixed-signal/RF process provided by TSMC. The PAs employs cascode topologies with wideband multi-stage matchings. The single-stage cascode PA is designed for a high power added efficiency (PAE) of 35.4% while the gain is 20.4 dB over the -3 dB bandwidth between 2.4 GHz and 2.48 GHz. The two-stage cascode PA is targeted for a high gain of 37.7 dB while it exhibits a peak PAE of 24.1%. Supplied by 1.2 V supply voltages, the PAs consume DC powers of 4.5 mW and 9 mW, respectively.


2005 ◽  
Author(s):  
J.R. Lane ◽  
R.G. Freitag ◽  
J.E. Degenford ◽  
M. Cohn

Author(s):  
Y. Tkachenko ◽  
A. Klimashov ◽  
C. Wei ◽  
Y. Zhao ◽  
D. Bartle

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