Temperature Dependent Study of Random Telegraph Noise in Gate-All-Around PMOS Silicon Nanowire Field-Effect Transistors

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2045006 ◽

2010 ◽

Vol 9 (6) ◽

pp. 754-758 ◽

Author(s):

B. H. Hong ◽

L. Choi ◽

Y. C. Jung ◽

S. W. Hwang ◽

K. H. Cho ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Temperature Dependent ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

Temperature Dependent Study

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Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate- All-Around PMOS Silicon Nanowire Field-Effect-Transistors

10.7567/ssdm.2010.p-13-12 ◽

2010 ◽

Author(s):

B. H. Hong ◽

S. J. Lee ◽

S. W. Hwang ◽

Y. Y. Lee ◽

D. Ahn ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Tunneling State ◽

Random Telegraph Noise ◽

Single Hole ◽

Telegraph Noise

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Effects of a dual spacer on electrical characteristics and random telegraph noise of gate-all-around silicon nanowire p-type metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab5b7c ◽

2020 ◽

Vol 59 (SG) ◽

pp. SGGA02 ◽

Author(s):

Sekhar Reddy Kola ◽

Yiming Li ◽

Narasimhulu Thoti

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Random Telegraph Noise ◽

Telegraph Noise ◽

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Co-existence of Random Telegraph Noise and Single-Hole-Tunneling State in Gate-All-Around PMOS Silicon Nanowire Field-Effect-Transistors

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.2.080 ◽

2011 ◽

Vol 11 (2) ◽

pp. 80-87

Author(s):

Byoung-Hak Hong ◽

Seong-Joo Lee ◽

Sung-Woo Hwang ◽

Keun-Hwi Cho ◽

Kyoung-Hwan Yeo ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Tunneling State ◽

Random Telegraph Noise ◽

Single Hole ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.114001 ◽

2012 ◽

Vol 51 (11R) ◽

pp. 114001 ◽

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Investigation of Relationship between Interface State and Random Telegraph Noise Using Metal–Oxide–Semiconductor Field-Effect Transistors Fabricated on Si(100), (110), and (111) Substrates

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.114001 ◽

2012 ◽

Vol 51 ◽

pp. 114001

Author(s):

Naoki Tega ◽

Hiroshi Miki ◽

Toshiyuki Mine ◽

Kazuyoshi Torii

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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Extraction of time constants ratio over nine orders of magnitude for understanding random telegraph noise in metal–oxide–semiconductor field-effect transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec19 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC19 ◽

Author(s):

Toshiki Obara ◽

Akihiro Yonezawa ◽

Akinobu Teramoto ◽

Rihito Kuroda ◽

Shigetoshi Sugawa ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Time Constants ◽

Telegraph Noise

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Effects of plasma-induced charging damage on random telegraph noise in metal–oxide–semiconductor field-effect transistors with SiO2and high-kgate dielectrics

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.03df02 ◽

2014 ◽

Vol 53 (3S2) ◽

pp. 03DF02 ◽

Author(s):

Masayuki Kamei ◽

Yoshinori Takao ◽

Koji Eriguchi ◽

Kouichi Ono

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

Telegraph Noise

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An automated system for measurement of random telegraph noise in metal-oxide-semiconductor field-effect transistors

IEEE Transactions on Electron Devices ◽

10.1109/16.24373 ◽

1989 ◽

Vol 36 (6) ◽

pp. 1217-1219 ◽

Author(s):

K.K. Hung ◽

P.K. Ko ◽

C. Hu ◽

Y.C. Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Automated System ◽

Random Telegraph Noise ◽

Telegraph Noise

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Characterization of Oxide Traps in 28 nm n-Type Metal–Oxide–Semiconductor Field-Effect Transistors with Different Uniaxial Tensile Stresses Utilizing Random Telegraph Noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc24 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC24 ◽

Author(s):

Bo-Chin Wang ◽

San-Lein Wu ◽

Yu-Ying Lu ◽

Chien-Wei Huang ◽

Chung-Yi Wu ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Random Telegraph Noise ◽

Tensile Stresses ◽

Telegraph Noise

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