Precision Measurements of the Ionization Energy and Its Temperature Variation in High Purity Silicon Radiation Detectors

1973 ◽  
Vol 20 (1) ◽  
pp. 473-480 ◽  
Author(s):  
R. D. Ryan
1996 ◽  
Vol 43 (6) ◽  
pp. 2687-2692 ◽  
Author(s):  
V.I. Khivrich ◽  
M.D. Varentsov ◽  
P.G. Litovchenko ◽  
A.I. Anokhin ◽  
O.S. Zinets ◽  
...  

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:


JOM ◽  
2021 ◽  
Author(s):  
Jian Kong ◽  
Donghui Wei ◽  
Pengfei Xing ◽  
Yanxin Zhuang ◽  
Xing Jin ◽  
...  

1989 ◽  
Vol 16 (3) ◽  
pp. 287-298 ◽  
Author(s):  
W.R.Th. Ten Kate ◽  
S.A. Audet

Author(s):  
Tetsuo YAGIHASHI ◽  
Toshio KUROSAWA ◽  
Takeo WADA

AIChE Journal ◽  
1996 ◽  
Vol 42 (12) ◽  
pp. 3477-3483 ◽  
Author(s):  
Mostafa Maalmi ◽  
Arvind Varma

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