Radiation-Induced Defect Centers in Thermally Grown Oxide Films

1975 ◽  
Vol 22 (6) ◽  
pp. 2234-2239 ◽  
Author(s):  
C. L. Marquardt ◽  
G. H. Sigel
1980 ◽  
Vol 11 (20) ◽  
Author(s):  
K. S. YUN ◽  
S. M. WILHELM ◽  
S. KAPUSTA ◽  
N. HACKERMAN

2015 ◽  
Vol 333 ◽  
pp. 96-103 ◽  
Author(s):  
P. Horodek ◽  
K. Siemek ◽  
A.G. Kobets ◽  
M. Kulik ◽  
I.N. Meshkov

1980 ◽  
Vol 127 (1) ◽  
pp. 85-90 ◽  
Author(s):  
K. S. Yun ◽  
S. M. Wilhelm ◽  
S. Kapusta ◽  
N. Hackerman

2006 ◽  
Vol 252 (12) ◽  
pp. 4209-4217 ◽  
Author(s):  
L. Hamadou ◽  
A. Kadri ◽  
D. Boughrara ◽  
N. Benbrahim ◽  
J.-P. Petit

2004 ◽  
Vol 841 ◽  
Author(s):  
Fatih Helvaci ◽  
Junghyun Cho

ABSTRACTWe explore the effect of the substrate on mechanical behavior of thin films using a depth-sensing indentation. For this purpose, nanoindentation has been performed on thermally grown silicon oxide films on the silicon substrate. One primary goal of this study is to extract ‘film-only’ mechanical properties from the nanoindentation data by subtracting the substrate effect. It is also shown that elastic modulus of the film is more influenced by the substrate than hardness due to a larger elastic extension beyond a plastically deformed region, as well as a larger elastic mismatch between the SiO2 film and the Si substrate. Further, an inverse analysis of indentation data is proposed to estimate a thickness of thin films. Consequently, this study provides a fundamental understanding in mechanical phenomena of thin films occurring at nanoscales.


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