Single-Event-Upset Critical Charge Measurements and Modeling of 65 nm Silicon-on-Insulator Latches and Memory Cells

2006 ◽  
Vol 53 (6) ◽  
pp. 3512-3517 ◽  
Author(s):  
David F. Heidel ◽  
Kenneth P. Rodbell ◽  
Phil Oldiges ◽  
Michael S. Gordon ◽  
Henry H. K. Tang ◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Memory Cells ◽  
Single Event Upset ◽  
Single Event ◽  
Critical Charge

Single-event upset in commercial silicon-on-insulator powerPC microprocessors

2002 ◽  
Vol 49 (6) ◽  
pp. 3148-3155 ◽  
Author(s):  
F. Irom ◽  
F.F. Farmanesh ◽  
A.H. Johnston ◽  
G.M. Swift ◽  
D.G. Millward
Keyword(s):  
Silicon On Insulator ◽  
Single Event Upset ◽  
Single Event

Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies

2003 ◽  
Vol 50 (6) ◽  
pp. 2107-2112 ◽  
Author(s):  
F. Irom ◽  
F.H. Farmanesh ◽  
G.M. Swift ◽  
A.H. Johnston ◽  
G.L. Yoder
Keyword(s):  
Silicon On Insulator ◽  
Single Event Upset ◽  
Single Event

Low-Energy Proton-Induced Single-Event-Upsets in 65 nm Node, Silicon-on-Insulator, Latches and Memory Cells

2007 ◽  
Vol 54 (6) ◽  
pp. 2474-2479 ◽  
Author(s):  
Kenneth P. Rodbell ◽  
David F. Heidel ◽  
Henry H. K. Tang ◽  
Michael S. Gordon ◽  
Phil Oldiges ◽  
...  
Keyword(s):  
Low Energy ◽  
Silicon On Insulator ◽  
Memory Cells ◽  
Single Event ◽  
Single Event Upsets ◽  
Energy Proton

scholarly journals Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

2000 ◽  
Vol 47 (6) ◽  
pp. 2165-2174 ◽  
Author(s):  
P.E. Dodd ◽  
M.R. Shaneyfelt ◽  
D.S. Walsh ◽  
J.R. Schwank ◽  
G.L. Hash ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Silicon On Insulator ◽  
Single Event Upset ◽  
Single Event

An Error Correction Code for Use in Space Vehicle Computers

2011 ◽  
Vol 121-126 ◽  
pp. 3784-3788
Author(s):  
R.N. Huang ◽  
B. Gong ◽  
Yun Jiang Lou
Keyword(s):  
Error Correction ◽  
Error Detection ◽  
Efficient Solution ◽  
Space Vehicle ◽  
Space Vehicles ◽  
Memory Cells ◽  
Hamming Code ◽  
Single Event Upset ◽  
Single Event ◽  
Signal Error

Memory cells of space vehicle computers generate errors in their stored data because of radiation. The main reason of the error is single event upset (SEU). Hamming code which has Capability of correcting one bit and detecting two bits is usually used in space vehicles to secure the memory data. As the density of the memory is more and more high, the possibility of multiple bits upset (MBU) increase and hamming code may be inadequate. In this paper, a (15,8) code is presented which can correct all double-adjacent errors and triple-adjacent errors in addition to signal error correction (SEC) and double error detection (DED). It is a powerful and efficient solution to SEU and MBU.

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