On the Impact of Substrate Uniform Mechanical Tension on the Graphene Electronic Structure

Employing density functional theory calculations, we obtain the possibility of fine-tuning the bandgap in graphene deposited on the hexagonal boron nitride and graphitic carbon nitride substrates. We found that the graphene sheet located on these substrates possesses the semiconducting gap, and uniform biaxial mechanical deformation could provide its smooth fitting. Moreover, mechanical tension offers the ability to control the Dirac velocity in deposited graphene. We analyze the resonant scattering of charge carriers in states with zero total angular momentum using the effective two-dimensional radial Dirac equation. In particular, the dependence of the critical impurity charge on the uniform deformation of graphene on the boron nitride substrate is shown. It turned out that, under uniform stretching/compression, the critical charge decreases/increases monotonically. The elastic scattering phases of a hole by a supercritical impurity are calculated. It is found that the model of a uniform charge distribution over the small radius sphere gives sharper resonance when compared to the case of the ball of the same radius. Overall, resonant scattering by the impurity with the nearly critical charge is similar to the scattering by the potential with a low-permeable barrier in nonrelativistic quantum theory.

The critical transition of Coulomb impurities in gapped graphene

The effect of supercritical charge impurities in graphene is very similar to the supercritical atomic collapses in QED for Z > 137, but with a much lower critical charge. In this sense graphene can be considered as a natural testing ground for the analysis of quantum field theory vacuum instabilities. We analyze the quantum transition from subcritical to supercritical charge regimes in gapped graphene in a common framework that preserves unitarity for any value of charge impurities. In the supercritical regime it is possible to introduce boundary conditions which control the singular behavior at the impurity. We show that for subcritical charges there are also non-trivial boundary conditions which are similar to those that appear in QED for nuclei in the intermediate regime 118 < Z < 137. We analyze the behavior of the energy levels associated to the different boundary conditions. In particular, we point out the existence of new bound states in the subcritical regime which include a negative energy bound state in the attractive Coulomb regime. A remarkable property is the continuity of the energy spectral flow under variation of the impurity charge even when jumping across the critical charge transition. We also remark that the energy levels of hydrogenoid bound states at critical values of charge impurities act as focal points of the spectral flow.

Bias Temperature Instability Aware and Soft Error Tolerant Radiation Hardened 10T SRAM Cell

In this paper, we propose an asymmetric radiation-hardened 10T (AS10T) SRAM cell and analyze the impact of bias temperature instabilities (BTI) on the single event upset of the modified structure. For this, we make use of a read decoupled circuit to improve the stability of the reading cycle, and a charge booster circuit to increase the critical charge at the sensitive node of the SRAM cell. First, we compare the noise margin of several reference cells and can clearly observe that the read static noise margin (RSNM) of AS10T is 3.25× higher than as can be achieved for the 6T SRAM cell. This improvement is due to the read decoupled path used for the read operation. To analyze the soft-error hardening, we calculate the critical charge and observe that the critical charge of the proposed AS10T cell exceed the same parameter of other SRAM cells. Further, we perform critical charge simulations and stability analysis considering BTI and observe that the AS10T SRAM cell is also less affected by BTI as the reference cells.