Single event effects induced by heavy ions in SONOS charge trapping memory arrays

2021 ◽  
pp. 1-1
Author(s):  
T. Patrick Xiao ◽  
Christopher H. Bennett ◽  
Sapan Agarwal ◽  
David R. Hughart ◽  
Hugh J. Barnaby ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Charge Trapping ◽  
Single Event ◽  
Single Event Effects ◽  
Memory Arrays ◽  
Charge Trapping Memory

Investigations of single event effects with heavy ions of energies up to 1.5 GeV/n

2011 ◽  
Author(s):  
Stefan K. Hoeffgen ◽  
Marco Durante ◽  
Veronique Ferlet-Cavrois ◽  
Reno Harboe-Sorensen ◽  
Wilhelm Lennartz ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Single Event ◽  
Single Event Effects

Single Event Effects in NAND Flash Memory Arrays

2006 ◽  
Vol 53 (4) ◽  
pp. 1813-1818 ◽  
Author(s):  
G. Cellere ◽  
A. Paccagnella ◽  
A. Visconti ◽  
M. Bonanomi ◽  
S. Beltrami
Keyword(s):  
Flash Memory ◽  
Nand Flash ◽  
Single Event ◽  
Nand Flash Memory ◽  
Single Event Effects ◽  
Memory Arrays

Single Event Effects Characterization of the Programmable Logic of Xilinx Zynq-7000 FPGA using Very/Ultra-High Energy Heavy Ions

2020 ◽  
pp. 1-1
Author(s):  
Vasileios Vlagkoulis ◽  
Aitzan Sari ◽  
John Vrachnis ◽  
Georgios Antonopoulos ◽  
Nikolaos Segkos ◽  
...  
Keyword(s):  
Heavy Ions ◽  
High Energy ◽  
Programmable Logic ◽  
Ultra High Energy ◽  
Single Event ◽  
Single Event Effects

Investigations of Single Event Effects With Heavy Ions of Energies up to 1.5 GeV/n

2012 ◽  
Vol 59 (4) ◽  
pp. 1161-1166 ◽  
Author(s):  
Stefan K. Hoeffgen ◽  
Marco Durante ◽  
Veronique Ferlet-Cavrois ◽  
Reno Harboe-Sorensen ◽  
Wilhelm Lennartz ◽  
...  
Keyword(s):  
Heavy Ions ◽  
Single Event ◽  
Single Event Effects

МЕТОДЫ ОЦЕНКИ СТОЙКОСТИ ИСТОЧНИКОВ ВТОРИЧНОГО ЭЛЕКТРОПИТАНИЯ К ВОЗДЕЙСТВИЮ ТЯЖЕЛЫХ ЗАРЯЖЕННЫХ ЧАСТИЦ

2020 ◽  
Vol 96 (3s) ◽  
pp. 595-598
Author(s):  
М.П. Белова ◽  
А.В. Яненко
Keyword(s):  
Heavy Ions ◽  
Radiation Hardness ◽  
Single Event ◽  
Single Event Effects

Проведен анализ данных по методам и средствам исследования стойкости источников вторичного питания (ИВЭП) к воздействию тяжелых заряженных частиц (ТЗЧ). Рассмотрены варианты реализации ИВЭП, приведена взаимосвязь схемотехники и чувствительности изделия к воздействию ТЗЧ. Рассмотрены доминирующие механизмы одиночных радиационных эффектов, предложены методы повышения стойкости ИВЭП к воздействию ТЗЧ. The paper presents methods and tools of single event effects radiation hardness of DC-DC converters as well as various schematic editions of DC-DC converters. The correlation between DC-DC converters circuitry and its sensitivity to heavy ions have been demonstrated. The main mechanisms of single event effects in DC-DC converters have been researched and radiation hardness improvement methods have been proposed.

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