ABSTRACTSilicon thin films were prepared by “Chemical Annealing” where the deposition of thin layer (<3 nm thick) by RF glow discharge of SiH4 and the treatment with hydrogen atoms (H) or triplet state of argon (3Ar) were repeated alternatating. Consequently, wide gap a-Si:H with the gap of 2.1 eV was made by H-treatmentat rather low substrate temperature (Ts<150 °C), while a-Si:H with the gap narrower than 1.6 eV was obtained by the treatment with 3Ar at high Ts (>300 °C), resulting from the release of excessive hydrogen. Both the wider or the narrower gap films exhibited low defect density lower than 1016 cm−3 and obvious improvements in the stability for light soaking.
