Development of a World Class Silicon Carbide Substrate Manufacturing Capability

2020 ◽  
Vol 33 (4) ◽  
pp. 539-545
Author(s):  
J. D. Blevins
Keyword(s):  
Silicon Carbide ◽  
Manufacturing Capability ◽  
Silicon Carbide Substrate ◽  
World Class

Rapid fabrication of a silicon modification layer on silicon carbide substrate

2016 ◽  
Vol 55 (22) ◽  
pp. 5814 ◽  
Author(s):  
Yang Bai ◽  
Longxiang Li ◽  
Donglin Xue ◽  
Xuejun Zhang
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Substrate ◽  
Rapid Fabrication

Autoassembly of Nanofibrous Zeolite Crystals via Silicon Carbide Substrate Self-Transformation

2007 ◽  
Vol 129 (11) ◽  
pp. 3383-3391 ◽  
Author(s):  
Svetlana Ivanova ◽  
Benoit Louis ◽  
Marc-Jacques Ledoux ◽  
Cuong Pham-Huu
Keyword(s):  
Silicon Carbide ◽  
Silicon Carbide Substrate ◽  
Zeolite Crystals

Epitaxial growth of graphene on 6H-silicon carbide substrate by simulated annealing method

2013 ◽  
Vol 139 (20) ◽  
pp. 204702 ◽  
Author(s):  
T. L. Yoon ◽  
T. L. Lim ◽  
T. K. Min ◽  
S. H. Hung ◽  
N. Jakse ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Simulated Annealing ◽  
Epitaxial Growth ◽  
Simulated Annealing Method ◽  
Silicon Carbide Substrate ◽  
Annealing Method

scholarly journals Field effect in epitaxial graphene on a silicon carbide substrate

2007 ◽  
Vol 90 (25) ◽  
pp. 253507 ◽  
Author(s):  
Gong Gu ◽  
Shu Nie ◽  
R. M. Feenstra ◽  
R. P. Devaty ◽  
W. J. Choyke ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Epitaxial Graphene ◽  
Silicon Carbide Substrate

Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate

2017 ◽  
Vol 59 (12) ◽  
pp. 2374-2380 ◽  
Author(s):  
A. V. Tumarkin ◽  
I. T. Serenkov ◽  
V. I. Sakharov ◽  
S. V. Razumov ◽  
A. A. Odinets ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Strontium Titanate ◽  
Barium Strontium Titanate ◽  
Barium Strontium ◽  
Silicon Carbide Substrate

Research on the Distribution of Subsurface Damage Layer on SiC Substrate After Double-Side Lapping

2015 ◽  
Vol 14 (01) ◽  
pp. 1-10 ◽  
Author(s):  
Hai Zhou ◽  
Xiaoming Xu ◽  
Xiang Gao ◽  
Yuan Zhang
Keyword(s):  
Silicon Carbide ◽  
Surface Damage ◽  
Damage Mechanism ◽  
Processing Parameters ◽  
Subsurface Damage ◽  
Shape Measurement ◽  
Theoretic Model ◽  
Damage Layer ◽  
Silicon Carbide Substrate ◽  
Measurement Laser

In this paper, the surface damage mechanism of silicon carbide lapping process was studied. A theoretic model between the depth of subsurface damage and surface scratch of silicon carbide substrate double-side lapping has been built. An experiment of two-sided lapping combining VK-X100/X200 shape measurement laser microscopy system with HF mild chemical etching experiment on SiC substrate was processed to obtain the distribution of surface scratch and subsurface damage layer with depth. The study shows that the thickness of subsurface damage layer decreases as the depth increases, which centrally distributes in the depth of 0–15.6 μm from outer fragmentation and scratch damage layer, which accounted for about 98.6%. The result can help us to optimize processing parameters of silicon carbide substrate double-side lapping to control the depth of subsurface damage layer.

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