Finite-Point-Based Transistor Model: A New Approach to Fast Circuit Simulation

2009 ◽  
Vol 17 (10) ◽  
pp. 1470-1480 ◽  
Author(s):  
Min Chen ◽  
Wei Zhao ◽  
F. Liu ◽  
Yu Cao
Keyword(s):  
Circuit Simulation ◽  
Finite Point ◽  
New Approach ◽  
Fast Circuit ◽  
Transistor Model

Division by current: a new approach to FET capacitance modeling

2011 ◽  
Vol 3 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Stephen Maas
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Circuit Simulation ◽  
New Approach ◽  
Charge Conservation ◽  
Capacitance Measurements ◽  
Current Formulation ◽  
Effect Transistor

This paper introduces a new approach to the modeling of capacitance in field-effect transistor (FET) devices, which we call division by current. It is compared with existing formulations, which we call division by capacitance and division by charge. In doing so, it is necessary to normalize the theory of nonlinear capacitances and to clarify a number of matters. These include charge conservation and determination of charge functions from capacitance measurements, which are often misstated in the literature. We find the division by current formulation to be practical and to have significant advantages in the generation of FET models and in circuit simulation.

SFLU: Synchronization-Free Sparse LU Factorization for Fast Circuit Simulation on GPUs

2021 ◽  
Author(s):  
Jianqi Zhao ◽  
Yao Wen ◽  
Yuchen Luo ◽  
Zhou Jin ◽  
Weifeng Liu ◽  
...  
Keyword(s):  
Circuit Simulation ◽  
Lu Factorization ◽  
Fast Circuit
Sign in / Sign up

Export Citation Format

Share Document