scholarly journals An Efficient Voltage Step-up/down Partial Power Converter (SUD- PPC) using Wide Bandgap devices

Author(s):  
Chao Liu ◽  
Zhe Zhang ◽  
Michael A. E. Andersen
Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 87 ◽  
Author(s):  
Jaime Zapata ◽  
Samir Kouro ◽  
Gonzalo Carrasco ◽  
Thierry Meynard

Photovoltaic (PV) systems composed by two energy conversion stages are attractive from an operation point of view. This is because the maximum power point tracking (MPPT) range is extended, due to the voltage decoupling between the PV system and the dc-link. Nevertheless, the additional dc-dc conversion stage increases the volume, cost and power converter losses. Therefore, central inverters based on a single-stage converter, have been a mainstream solution to interface large-scale PV arrays composed of several strings connected in parallel made by the series connections of PV modules. The concept of partial power converters (PPC), previously reported as a voltage step-up stage, has not addressed in depth for all types of PV applications. In this work, a PPC performing voltage step-down operation is proposed and analyzed. This concept is interesting from the industry point of view, since with the new isolation standards of PV modules are reaching 1500 V, increasing both the size of the string and dc-link voltage for single-stage inverters. Since grid connection remains typically at 690 V, larger strings impose more demanding operation for single-stage central inverters (required to operate at lower modulation indexes and demand higher blocking voltage devices), making the proposed step-down PPC an attractive solution. Theoretical analysis and an experimental test-bench was built in order to validate the PPC concept, the control performance and the improvement of the conversion efficiency. The experimental results corroborate the benefits of using a PPC, in terms of increasing the system efficiency by reducing the processed power of the converter, while not affecting the system performance.


Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.


2010 ◽  
Vol 130 (5) ◽  
pp. 646-654 ◽  
Author(s):  
Miao Hong ◽  
Satoshi Horie ◽  
Yushi Miura ◽  
Tosifumi Ise ◽  
Yuki Sato ◽  
...  

2020 ◽  
Vol 140 (3) ◽  
pp. 140-147
Author(s):  
Koji Takechi ◽  
Takeshi Yokoi ◽  
Hiroaki Kakigano

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