Determination of mean free path for energy loss and surface oxide film thickness using convergent beam electron diffraction and thickness mapping: a case study using Si and P91 steel

2006 ◽  
Vol 224 (2) ◽  
pp. 187-196 ◽  
Author(s):  
D. R. G. MITCHELL
2002 ◽  
Vol 382 (4) ◽  
pp. 422-430 ◽  
Author(s):  
Takuya Hashimoto ◽  
Kenji Tsuda ◽  
Junichiro Shiono ◽  
Junichiro Mizusaki ◽  
Michiyoshi Tanaka

1999 ◽  
Vol 589 ◽  
Author(s):  
C. Schuer ◽  
M. Leicht ◽  
T. Marek ◽  
H.P. Strunk

AbstractWe have optimized the sensitivity of convergent beam electron diffraction (CBED) by orienting the specimen such that the central (000) diffraction disc shows a pattern of defect lines that are most sensitive to tetragonal distortion. We compare the position of these lines in the experimentally obtained patterns with results from computer simulations, which need to be based on dynamical diffraction theory. In both experimental and simulated patterns the positions of the defect lines are determined by applying a Hough transformation. As a result of this optimized approach, we can measure the tetragonal distortion of a low temperature grown GaAs layer as low as 0.04%.


2000 ◽  
Vol 69 (7) ◽  
pp. 1939-1941 ◽  
Author(s):  
Kenji Tsuda ◽  
Shuichi Amamiya ◽  
Michiyoshi Tanaka ◽  
Yukio Noda ◽  
Masahiko Isobe ◽  
...  

2007 ◽  
Vol 13 (5) ◽  
pp. 329-335 ◽  
Author(s):  
Suk Chung ◽  
David J. Smith ◽  
Martha R. McCartney

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.


1992 ◽  
Vol 31 (Part 2, No. 2A) ◽  
pp. L109-L112 ◽  
Author(s):  
Masakazu Saito ◽  
Michiyoshi Tanaka ◽  
An Pang Tsai ◽  
Akihisa Inoue ◽  
Tsuyoshi Masumoto

2002 ◽  
Vol 47 (11) ◽  
pp. 757-762 ◽  
Author(s):  
S.H Chen ◽  
G Schumacher ◽  
D Mukherji ◽  
G Frohberg ◽  
R.P Wahi

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