Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction
2007 ◽
Vol 13
(5)
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pp. 329-335
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Keyword(s):
The Mean
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The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.
2021 ◽
Vol 77
(3)
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pp. 222-231
Keyword(s):
2006 ◽
Vol 224
(2)
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pp. 187-196
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1999 ◽
Vol 55
(4)
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pp. 652-658
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1982 ◽
Vol 40
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pp. 684-685
1986 ◽
Vol 44
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pp. 688-691
1992 ◽
Vol 50
(2)
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pp. 1152-1153
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1995 ◽
Vol 53
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pp. 444-445