Determination of the Inelastic Mean-Free-Path and Mean Inner Potential for AlAs and GaAs Using Off-Axis Electron Holography and Convergent Beam Electron Diffraction

2007 ◽  
Vol 13 (5) ◽  
pp. 329-335 ◽  
Author(s):  
Suk Chung ◽  
David J. Smith ◽  
Martha R. McCartney

The mean-free-paths for inelastic scattering of high-energy electrons (200 keV) for AlAs and GaAs have been determined based on a comparison of thicknesses as measured by electron holography and convergent-beam electron diffraction. The measured values are 77 ± 4 nm and 67 ± 4 nm for AlAs and GaAs, respectively. Using these values, the mean inner potentials of AlAs and GaAs were then determined, from a total of 15 separate experimental measurements, to be 12.1 ± 0.7 V and 14.0 ± 0.6 V, respectively. These latter measurements show good agreement with recent theoretical calculations within experimental error.

2003 ◽  
Vol 9 (5) ◽  
pp. 379-389 ◽  
Author(s):  
Jesper Friis ◽  
Bin Jiang ◽  
John C.H. Spence ◽  
Randi Holmestad

Accurate low-order structure factors for copper metal have been measured by quantitative convergent beam electron diffraction (QCBED). The standard deviation of the measured structure factors is equal to or smaller than the most accurate measurement by any other method, including X-ray single crystal Pendellösung, Bragg γ-ray diffraction, and high-energy electron diffraction. The electron structure factor for the (440) reflection was used to determine the Debye-Waller (DW) factor. The local heating of the specimen by the electron beam is determined to be 5 K under the current illumination conditions. The low-order structure factors for copper measured by different methods are compared and discussed. The new data set is used to test band theory and to obtain a charge density map. The charge deformation map shows a charge surplus between the atoms and agrees fairly well with the simple model of copper 2+ ions at the atomic sites in a sea of free uniformly distributed electrons.


2021 ◽  
Vol 77 (3) ◽  
pp. 222-231
Author(s):  
Hirofumi Matsuhata

The contrast of Gjønnes–Moodie (GM) lines which appear in convergent-beam electron diffraction patterns for non-symmorphic space-group crystals is explained using Bloch waves. In the two-dimensional space groups p2mg and pg the Bloch waves for electron diffraction are described. In both space groups along the Δ line, Bloch waves are arranged as two different types, and it is shown that the two types of Bloch waves do not contribute to the intensity of forbidden reflections. Along the position where the forbidden reflection satisfies the Bragg condition, degeneracies of two Bloch waves are found and it is shown that the degenerated pair of Bloch waves do not contribute to the intensity. These Bloch-wave results provide a new perspective in the understanding of the contrast mechanism of GM lines previously described using scattering polynomials. They also advance the understanding of Bloch-wave behaviour in high-energy electron diffraction.


Author(s):  
Jing Li ◽  
M. R. McCartney ◽  
R. E. Dunin-Borkowski ◽  
David J. Smith

Off-axis electron holography has been used to determine the mean inner potential of germanium using cleaved 90° wedge samples, where the wedge thickness profiles were checked by weak-beam dark-field extinction fringes. Dynamical contributions to the phase of the image were minimized by tilting to weakly diffracting conditions, as confirmed by reference to convergent-beam electron diffraction patterns. Small residual corrections were determined using multislice calculations. From a total of 18 separate measurements, it is concluded that the value of the mean inner potential is 14.3 (2) V, which agrees with recent theoretical calculations to within experimental error.


Author(s):  
K. Ishizuka

The technique of convergent-beam electron diffraction (CBED) has been established. However there is a distinct discrepancy concerning the CBED pattern symmetries associated with translation symmetries parallel to the incident beam direction: Buxton et al. assumed no detectable effects of translation components, while Goodman predicted no associated symmetries. In this report a procedure used by Gjønnes & Moodie1 to obtain dynamical extinction rules will be extended in order to derive the CBED pattern symmetries as well as the dynamical extinction rules.


Author(s):  
John F. Mansfield

One of the most important advancements of the transmission electron microscopy (TEM) in recent years has been the development of the analytical electron microscope (AEM). The microanalytical capabilities of AEMs are based on the three major techniques that have been refined in the last decade or so, namely, Convergent Beam Electron Diffraction (CBED), X-ray Energy Dispersive Spectroscopy (XEDS) and Electron Energy Loss Spectroscopy (EELS). Each of these techniques can yield information on the specimen under study that is not obtainable by any other means. However, it is when they are used in concert that they are most powerful. The application of CBED in materials science is not restricted to microanalysis. However, this is the area where it is most frequently employed. It is used specifically to the identification of the lattice-type, point and space group of phases present within a sample. The addition of chemical/elemental information from XEDS or EELS spectra to the diffraction data usually allows unique identification of a phase.


Author(s):  
J W Steeds

That the techniques of convergent beam electron diffraction (CBED) are now widely practised is evident, both from the way in which they feature in the sale of new transmission electron microscopes (TEMs) and from the frequency with which the results appear in the literature: new phases of high temperature superconductors is a case in point. The arrival of a new generation of TEMs operating with coherent sources at 200-300kV opens up a number of new possibilities.First, there is the possibility of quantitative work of very high accuracy. The small probe will essentially eliminate thickness or orientation averaging and this, together with efficient energy filtering by a doubly-dispersive electron energy loss spectrometer, will yield results of unsurpassed quality. The Bloch wave formulation of electron diffraction has proved itself an effective and efficient method of interpreting the data. The treatment of absorption in these calculations has recently been improved with the result that <100> HOLZ polarity determinations can now be performed on III-V and II-VI semiconductors.


Author(s):  
E. Silva ◽  
R. Scozia

The purpose in obtaining zone axis pattern map (zap map) from a given material is to provide a quick and reliable tool to identify cristaline phases, and crystallographic directions, even in small particles. Bend contours patterns and Kossel lines patterns maps from Zr single crystal in the [0001] direction have been presented previously. In the present communication convergent beam electron diffraction (CBED) zap map of Zr will be shown. CBED patterns were obtained using a Philips microscope model EM300, which was set up to carry out this technique. Convergent objective upper pole piece for STEM and some electronic modifications in the lens circuits were required, furthermore the microscope was carefully cleaned and it was operated at a vacuum eminently good.CBED patterns in the Zr zap map consist of zero layer disks, showing fine details within them which correspond to intersecting set of higher order Laue zone (HOLZ) deficiency lines.


Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.


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