Dependence of Semiconductor to Metal Transition of VO2 (011)/NiO{100}/MgO{100}/TiN{100}/Si{100} Heterostructures on Thin Film Epitaxy and Nature of Strain

2015 ◽  
Vol 98 (4) ◽  
pp. 1201-1208 ◽  
Author(s):  
Reza Bayati ◽  
Roya Molaei ◽  
Fan Wu ◽  
Jagdish Narayan ◽  
Sergey Yarmolenko
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

Energetics and kinetics of Cu atoms and clusters on the Si(111)-7 × 7 surface: first-principles calculations

2016 ◽  
Vol 18 (27) ◽  
pp. 18549-18554 ◽  
Author(s):  
Xiao-Yan Ren ◽  
Chun-Yao Niu ◽  
Wei-Guang Chen ◽  
Ming-Sheng Tang ◽  
Jun-Hyung Cho
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
First Principles ◽  
Self Assembly ◽  
Catalytic Reactions ◽  
Semiconductor Surface ◽  
First Principles Calculations ◽  
Metal Atoms ◽  
Thin Film Epitaxy ◽  
Kinetics Of

Exploring the properties of noble metal atoms and nano- or subnano-clusters on the semiconductor surface is of great importance in many surface catalytic reactions, self-assembly processes, crystal growth, and thin film epitaxy.

“Nanostructures in Thin-film Epitaxy: Exploring and Exploiting Substrate-mediated Interactions”

2004 ◽  
Vol 30 (5) ◽  
pp. 273-279 ◽  
Author(s):  
Michael L. Merrick* ◽  
Kristen A. Fichthorn
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

scholarly journals Island Nucleation in Thin-Film Epitaxy: A First-Principles Investigation

2000 ◽  
Vol 84 (23) ◽  
pp. 5371-5374 ◽  
Author(s):  
Kristen A. Fichthorn ◽  
Matthias Scheffler
Keyword(s):  
Thin Film ◽  
First Principles ◽  
Island Nucleation ◽  
Thin Film Epitaxy

Stabilization of a h.c.p. Cu phase by thin film epitaxy on Co(1 0 0)

1990 ◽  
Vol 74 (8) ◽  
pp. 811-815 ◽  
Author(s):  
C.J. Barnes ◽  
M. Valden ◽  
A. Vuoristo
Keyword(s):  
Thin Film ◽  
Thin Film Epitaxy

Computer simulation of metal thin-film epitaxy

1996 ◽  
Vol 272 (2) ◽  
pp. 223-228 ◽  
Author(s):  
Ruoping Wang ◽  
Kristen A. Fichthorn
Keyword(s):  
Thin Film ◽  
Computer Simulation ◽  
Metal Thin Film ◽  
Thin Film Epitaxy

Reentrant Growth in Kinetic Thin-Film Deposition on Stepped Surfaces

1995 ◽  
Vol 399 ◽  
Author(s):  
Rong-Fu Xiao
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Deposition Temperature ◽  
Diffusion Length ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Natural Phenomenon ◽  
Two Dimensional ◽  
Stepped Surfaces ◽  
Thin Film Epitaxy

ABSTRACTWe have studied the reentrant growth in kinetic thin-film deposition on stepped surfaces using a Monte Carlo simulation. The results show that the reentrant oscillation of two dimensional nucleation growth occurs as a result of the variation of surface diffusion length with deposition temperature, and that it is a natural phenomenon in kinetic thin-film epitaxy on a substrate with a permanent step source.

Thermodynamics of Thin Film Epitaxy

2002 ◽  
Vol 69 (4) ◽  
pp. 415-418 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Thin Film ◽  
Critical Thickness ◽  
Epitaxial Film ◽  
Free Energies ◽  
Equilibrium Thermodynamics ◽  
Direct Identification ◽  
Equilibrium Volume ◽  
Variation Approach ◽  
Thin Film Epitaxy ◽  
Volume Stress

The mechanics of thin film epitaxy is developed using an equilibrium thermodynamics formalism and linear elasticity. A virtual variation approach is employed that leads to a direct identification of the important volume and surface thermodynamic parameters characterizing mechanical equilibrium. In particular, the equilibrium volume stress state of an epitaxial film as a function of the film thickness, surface free energies, and surface stresses is obtained. It is shown how this formalism can be used to determine the critical thickness for epitaxy.

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