Negative zero‐field‐cooled magnetization and magnetic switching in multiferroic Lu 0.5 Sc 0.5 FeO 3 Ceramics

2021 ◽  
Author(s):  
Yuan Yuan ◽  
Kai Yang ◽  
Changcai Chen ◽  
Xianming Zheng ◽  
Guang Yu ◽  
...  
Keyword(s):  
Zero Field ◽  
Magnetic Switching

Thermally Activated Magnetic Switching Mode for Various Thicknesses of Perpendicularly Ferromagnetic Nano-dot

2019 ◽  
Vol 9 (2) ◽  
pp. 259-266
Author(s):  
Nur A. Wibowo ◽  
Cahya Handoyo ◽  
Leopoldus R. Sasongko
Keyword(s):  
Magnetic Field ◽  
Numerical Study ◽  
Magnetic Moments ◽  
Uniaxial Anisotropy ◽  
Thermal Fluctuation ◽  
Research Field ◽  
Zero Field ◽  
Magnetic Switching ◽  
Switching Mode ◽  
The Impact

Background: Even applying thermal pulse has been succeeded to reduce the coercivity through randomization the magnetization in such a way stimulate the magnetic reversion, the efficiency of magnetic switching field consumption in writing process still turns out to be an exciting research field to implement the HAMR technology. One of the remarkable geometric properties of HAMR storage media that can be correlated to the writing field reduction issue is the nano-dot thickness. Furthermore, thermal fluctuation causes the magnetization switching process to be probabilistic. This magnetic switching probability determines the magnitude of the writing field. This paper aims to investigate the impact of changes in media thickness on the magnetization process in particular at high temperatures numerically. Methods: Nano-dot was modeled as a parallelepiped with uniaxial anisotropy which was regarded as a magnetically isolated system where no disturbance field of neighboring nano-dots. Simulation arrangements were implemented to evaluate the two viewpoints in the current heat-assisted magnetic recording, either coercivity, as well as writing field consume. Coercivity was gauged by inducing a magnetic field which linearly increased up to 2 Tesla for 2.5 ns at thermal equilibrium to the surrounding. In evaluating writing field consume, thermal field pulse which just below the Curie temperature was generated while the magnetic field inducing the nano-dot. These schemes investigations were based on the Landau-Lifshift- Gilbert equation which accommodates the fluctuation-dissipation theorem in calculating thermal fluctuation effect. Also, temperature dependent material parameters such as magnetic saturation, magnetic anisotropy, and exchange interaction, were taken into account. Results: At room temperature, the coercive and nucleation fields are highly sensitive to the nano-dot thickness. Under thermal assistance, the writing field for 10 nm and 100 nm of the chosen thicknesses are 0.110 T and 0.125 T respectively. These writing grades are significantly lower than the coercivity of the media. For both thicknesses, zero field magnetization reversal phenomena are observed as indicated by the existences of the switching probabilities at H = 0. Conclusion: This numerical study showed that using the heating assistance close to the Curie point, nanodots with the chosen thicknesses and magnetic parameters were probably to be magnetized even no driven magnetic field. Along with this result, magnetic field induction which required to utterly magnetizing was only in the sub-Tesla - about a tenth of the coercive field. During magnetization processes under thermal assistance, randomization of magnetic moments initiated the switching dynamic before the domain wall was nucleated and propagated to reach a single magnetized domain.

Effect of thermal annealing on grain boundary chemistry of polycrystalline TiBa2Ca2Cu3Oy films

1994 ◽  
Vol 52 ◽  
pp. 968-969
Author(s):  
Z. L. Wang ◽  
C. L. Briant ◽  
J. DeLuca ◽  
A. Goyal ◽  
D. M. Kroeger ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Weak Link ◽  
Zero Field ◽  
Stabilized Zirconia ◽  
Local Texture ◽  
Transmission Electron ◽  
Axis Alignment ◽  
Boundary Chemistry ◽  
Small Misorientation ◽  
Misorientation Angles

Recent studies have shown that spray-pyrolyzed films of the Tl-1223 compound (TlxBa2Ca2Cu3Oy, with 0.7 < × < 0.95) on polycrystalline yttrium stabilized zirconia substrates can be prepared which have critical current density Jc near 105 A/cm2 at 77 K, in zero field. The films are polycrystalline, have excellent c-axis alignment, and show little evidence of weak-link behavior. Transmission electron microscopy (TEM) studies have shown that most grain boundaries have small misorientation angles. It has been found that the films have a nigh degree of local texture indicative of colonies of similarly oriented grains. It is believed that inter-colony conduction is enhanced by a percolative network of small angle boundaries at colony interfaces. It has also been found that Jc is increased by a factor of 4 - 5 after the films were annealed at 600 °C in oxygen. This study is thus carried out to determine the effect on grain boundary chemistry of the heat treatment.

Correlating the axial Zero Field Splitting with the slow magnetic relaxation in GdIII SIMs

2021 ◽  
Author(s):  
Júlia Mayans ◽  
Albert Escuer
Keyword(s):  
Magnetic Relaxation ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Field Splitting ◽  
Slow Magnetic Relaxation

A possible relation between the value of the axial Zero Field Splitting and the occurrence of field-induced slow magnetic relaxation has been established for a new gadolinium(iii) compound.

Analysis of the performance of a phase alternated multiple pulse sequence in spin I = 7/2 zero-field NQR spectroscopy

1997 ◽  
Vol 92 (6) ◽  
pp. 1035-1038 ◽  
Author(s):  
A. RAMAMOORTHY
Keyword(s):  
Pulse Sequence ◽  
Zero Field ◽  
Multiple Pulse

ENERGY DEPENDENCE OF THE POLARISATION IN ZERO-FIELD QUANTUM BEATS IN Hβ EMISSION

1979 ◽  
Vol 40 (C1) ◽  
pp. C1-335-C1-337 ◽  
Author(s):  
J. Carmeliet ◽  
J. C. Dehaes ◽  
W. Singer
Keyword(s):  
Energy Dependence ◽  
Quantum Beats ◽  
Zero Field

VERIFICATION OF ZERO-FIELD SPLITTING THEORY FOR SPIN S = 2 IONS IN MAGNETIC INSULATORS

1988 ◽  
Vol 49 (C8) ◽  
pp. C8-931-C8-932 ◽  
Author(s):  
Czesław Rudowicz
Keyword(s):  
Zero Field ◽  
Zero Field Splitting ◽  
Field Splitting ◽  
Magnetic Insulators

scholarly journals Creation of Negatively Charged Boron Vacancies in Hexagonal Boron Nitride Crystal by Electron Irradiation and Mechanism of Inhomogeneous Broadening of Boron Vacancy-Related Spin Resonance Lines

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1373
Author(s):  
Fadis F. Murzakhanov ◽  
Boris V. Yavkin ◽  
Georgiy V. Mamin ◽  
Sergei B. Orlinskii ◽  
Ivan E. Mumdzhi ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Electron Irradiation ◽  
Near Infrared ◽  
Hexagonal Boron Nitride ◽  
Optical Excitation ◽  
High Energy ◽  
Infrared Range ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Spin Resonance

Optically addressable high-spin states (S ≥ 1) of defects in semiconductors are the basis for the development of solid-state quantum technologies. Recently, one such defect has been found in hexagonal boron nitride (hBN) and identified as a negatively charged boron vacancy (VB−). To explore and utilize the properties of this defect, one needs to design a robust way for its creation in an hBN crystal. We investigate the possibility of creating VB− centers in an hBN single crystal by means of irradiation with a high-energy (E = 2 MeV) electron flux. Optical excitation of the irradiated sample induces fluorescence in the near-infrared range together with the electron spin resonance (ESR) spectrum of the triplet centers with a zero-field splitting value of D = 3.6 GHz, manifesting an optically induced population inversion of the ground state spin sublevels. These observations are the signatures of the VB− centers and demonstrate that electron irradiation can be reliably used to create these centers in hBN. Exploration of the VB− spin resonance line shape allowed us to establish the source of the line broadening, which occurs due to the slight deviation in orientation of the two-dimensional B-N atomic plains being exactly parallel relative to each other. The results of the analysis of the broadening mechanism can be used for the crystalline quality control of the 2D materials, using the VB− spin embedded in the hBN as a probe.

The role of zero-field splitting and π-stacking interaction of different nitrogen-donor ligands on the optical properties of luminescent rhenium tricarbonyl complexes

2021 ◽  
Author(s):  
Plinio Cantero-López ◽  
Yoan Hidalgo-Rosa ◽  
Zoraida Sandoval-Olivares ◽  
Julián Santoyo-Flores ◽  
Pablo Mella ◽  
...  
Keyword(s):  
Excited States ◽  
Coordination Compounds ◽  
Donor Ligands ◽  
Zero Field ◽  
Zero Field Splitting ◽  
Nitrogen Donor Ligands ◽  
Nitrogen Donor ◽  
Π Stacking Interaction ◽  
Rhenium Tricarbonyl

Rhenium tricarbonyl complexes are one of the most important classes of coordination compounds in inorganic chemistry. Exploring their luminescent excited states, lowest singlet (S1), and the lowest triplet (T1), is...

scholarly journals Anomalous transport due to Weyl fermions in the chiral antiferromagnets Mn3X, X = Sn, Ge

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Taishi Chen ◽  
Takahiro Tomita ◽  
Susumu Minami ◽  
Mingxuan Fu ◽  
Takashi Koretsune ◽  
...  
Keyword(s):  
Technological Innovation ◽  
Essential Role ◽  
Condensed Matter ◽  
Zero Field ◽  
Theoretical Studies ◽  
Planar Hall Effect ◽  
Topological States ◽  
Experimental And Theoretical Studies ◽  
Weyl Fermions

AbstractThe recent discoveries of strikingly large zero-field Hall and Nernst effects in antiferromagnets Mn3X (X = Sn, Ge) have brought the study of magnetic topological states to the forefront of condensed matter research and technological innovation. These effects are considered fingerprints of Weyl nodes residing near the Fermi energy, promoting Mn3X (X = Sn, Ge) as a fascinating platform to explore the elusive magnetic Weyl fermions. In this review, we provide recent updates on the insights drawn from experimental and theoretical studies of Mn3X (X = Sn, Ge) by combining previous reports with our new, comprehensive set of transport measurements of high-quality Mn3Sn and Mn3Ge single crystals. In particular, we report magnetotransport signatures specific to chiral anomalies in Mn3Ge and planar Hall effect in Mn3Sn, which have not yet been found in earlier studies. The results summarized here indicate the essential role of magnetic Weyl fermions in producing the large transverse responses in the absence of magnetization.

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