planar hall effect
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Nano Letters ◽  
2021 ◽  
Author(s):  
Min Wu ◽  
Daifeng Tu ◽  
Yong Nie ◽  
Shaopeng Miao ◽  
Wenshuai Gao ◽  
...  

2021 ◽  
Vol 119 (26) ◽  
pp. 261904
Author(s):  
Sonika ◽  
M. K. Hooda ◽  
Shailja Sharma ◽  
C. S. Yadav

2021 ◽  
Vol 130 (23) ◽  
pp. 233901
Author(s):  
Jun-jie Guo ◽  
Zi-yan Luo ◽  
Ju-jian Liao ◽  
Yao-zhuang Nie ◽  
Qing-lin Xia ◽  
...  

Author(s):  
Manasi Mandal ◽  
Chandan Patra ◽  
Anshu Kataria ◽  
Suvodeep Paul ◽  
Surajit Saha ◽  
...  

Abstract This work presents the emergence of superconductivity in Ir - doped Weyl semimetal T$_d$ - MoTe$_{2}$ with broken inversion symmetry. Chiral anomaly induced planar Hall effect and anisotropic magneto-resistance confirm the topological semimetallic nature of Mo$_{1-x}$Ir$_{x}$Te$_{2}$. Observation of weak anisotropic, moderately coupled type-II superconductivity in T$_d$ -Mo$_{1-x}$Ir$_{x}$Te$_{2}$ makes it a promising candidate for topological superconductor.


2021 ◽  
Vol 104 (15) ◽  
Author(s):  
X. C. Yang ◽  
X. Luo ◽  
J. J. Gao ◽  
Z. Z. Jiang ◽  
W. Wang ◽  
...  

2021 ◽  
Vol 119 (9) ◽  
pp. 092401
Author(s):  
Hayato Mizuno ◽  
Hironari Isshiki ◽  
Kouta Kondou ◽  
Yuanzhi Zhu ◽  
Yoshichika Otani

Materials ◽  
2021 ◽  
Vol 14 (16) ◽  
pp. 4483
Author(s):  
Tomasz Andrearczyk ◽  
Janusz Sadowski ◽  
Jerzy Wróbel ◽  
Tadeusz Figielski ◽  
Tadeusz Wosinski

We have thoroughly investigated the planar Hall effect (PHE) in the epitaxial layers of the quaternary compound (Ga,Mn)(Bi,As). The addition of a small amount of heavy Bi atoms to the prototype dilute ferromagnetic semiconductor (Ga,Mn)As enhances significantly the spin–orbit coupling strength in its valence band, which essentially modifies certain magnetoelectric properties of the material. Our investigations demonstrate that an addition of just 1% Bi atomic fraction, substituting As atoms in the (Ga,Mn)As crystal lattice, causes an increase in the PHE magnitude by a factor of 2.5. Moreover, Bi incorporation into the layers strongly enhances their coercive fields and uniaxial magneto-crystalline anisotropy between the in-plane ⟨110⟩ crystallographic directions in the layers grown under a compressive misfit strain. The displayed two-state behaviour of the PHE resistivity at zero magnetic field, which may be tuned by the control of applied field orientation, could be useful for application in spintronic devices, such as nonvolatile memory elements.


2021 ◽  
Vol 104 (3) ◽  
Author(s):  
Mingrui Liu ◽  
Haiwen Liu ◽  
Tingna Shao ◽  
Weimin Jiang ◽  
Zitao Zhang ◽  
...  

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