Magnetic memory driven by topological insulators

Giant spin-orbit torque (SOT) from topological insulators (TIs) provides an energy efficient writing method for magnetic memory, which, however, is still premature for practical applications due to the challenge of the integration with magnetic tunnel junctions (MTJs). Here, we demonstrate a functional TI-MTJ device that could become the core element of the future energy-efficient spintronic devices, such as SOT-based magnetic random-access memory (SOT-MRAM). The state-of-the-art tunneling magnetoresistance (TMR) ratio of 102% and the ultralow switching current density of 1.2 × 105 A cm−2 have been simultaneously achieved in the TI-MTJ device at room temperature, laying down the foundation for TI-driven SOT-MRAM. The charge-spin conversion efficiency θSH in TIs is quantified by both the SOT-induced shift of the magnetic switching field (θSH = 1.59) and the SOT-induced ferromagnetic resonance (ST-FMR) (θSH = 1.02), which is one order of magnitude larger than that in conventional heavy metals. These results inspire a revolution of SOT-MRAM from classical to quantum materials, with great potential to further reduce the energy consumption.

Analysis and Synthesis in the Design of Magnetic Switching Electric Machines

A systematic approach to the design of electrical machines is implemented by solving problems of analysis and synthesis in various combinations at different stages and stages of design. The questions of the formulation and implementation of synthesis and analysis problems in the study and design of modular-type magnetically commutated electrical machines are considered. They are aimed at reducing weight, size and cost while improving the performance of these newly designed machines. A complex method of parametric synthesis and an automated program containing a calculated mathematical model of an electric machine has been developed. On the basis of numerical full factorial experiments, the optimization parameter is determined, and a regression analysis is performed with the construction of an optimization model. It allows you to find a narrow range of variation of significant factors, at which the optimization parameter satisfies the specified conditions. On the example of studying an inductor generator of axial-radial configuration, new approaches to the formulation and solution of typical problems of analysis and synthesis of modular-type electrical machines are shown. The use of complex parametric synthesis makes it possible to significantly reduce the masses of the designed modular machines in comparison with drum-type inductor machines of the same power.

Observation of current-induced switching in non-collinear antiferromagnetic IrMn3 by differential voltage measurements

There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out via magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals in AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol to unambiguously distinguish current-induced magnetic and nonmagnetic switching signals in AFM/HM structures, and demonstrate it in IrMn3/Pt devices. A six-terminal double-cross device is constructed, with an IrMn3 pillar placed on one cross. The differential voltage is measured between the two crosses with and without IrMn3 after each switching attempt. For a wide range of current densities, reversible switching is observed only when write currents pass through the cross with the IrMn3 pillar, eliminating any possibility of non-magnetic switching artifacts. Micromagnetic simulations support our findings, indicating a complex domain-mediated switching process.

From Slater to Mott physics by epitaxially engineering electronic correlations in oxide interfaces

Using spin-assisted ab initio random structure searches, we explore an exhaustive quantum phase diagram of archetypal interfaced Mott insulators, i.e. lanthanum-iron and lanthanum-titanium oxides. In particular, we report that the charge transfer induced by the interfacial electronic reconstruction stabilises a high-spin ferrous Fe2+ state. We provide a pathway to control the strength of correlation in this electronic state by tuning the epitaxial strain, yielding a manifold of quantum electronic phases, i.e. Mott-Hubbard, charge transfer and Slater insulating states. Furthermore, we report that the electronic correlations are closely related to the structural oxygen octahedral rotations, whose control is able to stabilise the low-spin state of Fe2+ at low pressure previously observed only under the extreme high pressure conditions in the Earth’s lower mantle. Thus, we provide avenues for magnetic switching via THz radiations which have crucial implications for next generation of spintronics technologies.