Using laser marking to engrave optimal patterns for in‐plane displacement and strain measurement

Strain ◽  
2021 ◽  
Author(s):  
Quentin Bouyra ◽  
Benoît Blaysat ◽  
Hélène Chanal ◽  
Michel Grédiac
Keyword(s):  
Strain Measurement ◽  
Laser Marking ◽  
Plane Displacement

In-plane displacement and strain measurement by speckle interferometry and moire derivation

1981 ◽  
Vol 20 (19) ◽  
pp. 3392 ◽  
Author(s):  
Michael Spajer ◽  
Pramod K. Rastogi ◽  
Jacques Monneret
Keyword(s):  
Strain Measurement ◽  
Speckle Interferometry ◽  
Plane Displacement

scholarly journals The Grid Method for In-plane Displacement and Strain Measurement: A Review and Analysis

Strain ◽  
2016 ◽  
Vol 52 (3) ◽  
pp. 205-243 ◽  
Author(s):  
M. Grédiac ◽  
F. Sur ◽  
B. Blaysat
Keyword(s):  
Strain Measurement ◽  
Grid Method ◽  
Plane Displacement

Strain analysis by means of digital shearography: Potential, limitations and demonstration

1998 ◽  
Vol 33 (2) ◽  
pp. 171-182 ◽  
Author(s):  
W Steinchen ◽  
L X Yang ◽  
G Kupfer ◽  
P Mäckel ◽  
F Vössing
Keyword(s):  
Strain Measurement ◽  
Speckle Pattern ◽  
Strain Analysis ◽  
Measuring Method ◽  
Non Destructive Testing ◽  
Destructive Testing ◽  
Out Of Plane ◽  
Recent Developments ◽  
Plane Displacement ◽  
Non Destructive

Shearography, also called speckle pattern shearing interferometry, is a coherent optical method which measures displacement derivatives directly. It is suited well for localization of strain concentrations and has been used as an industrial tool for non-destructive testing (NDT) in the last few years. However, its application for strain measurement has not been widely adopted in industry, because, in general, shearography can measure only out-of-plane displacement derivatives ∂w/∂x and ∂w/∂y. This paper presents recent developments of shearography for strain measurement. With the support of digital image processing the automatic and quantitative evaluation of the shearogram becomes possible. Not only flexural strains [∂2w/∂x2, ∂2w/∂y2 and ∂2w/(∂y)] but also in-plane strains (∂u/∂x, ∂v/∂y, ∂u/∂y and ∂v/∂x) can be determined by the shearographic measuring method. The potentials and limitations for strain measurement are discussed. Some applications are shown.

Strain measurement by means of bend contour microscopy

1989 ◽  
Vol 47 ◽  
pp. 210-211
Author(s):  
Philip D. Hren
Keyword(s):  
Strain Measurement ◽  
Large Angle ◽  
Single Crystal Silicon ◽  
Convergent Beam Electron Diffraction ◽  
Zone Axis ◽  
Silicon Membrane ◽  
Crystal Silicon ◽  
Contour Pattern ◽  
Convergent Beam ◽  
Low Symmetry

The pattern of bend contours which appear in the TEM image of a bent or curled sample indicates the shape into which the specimen is bent. Several authors have characterized the shape of their bent foils by this method, most recently I. Bolotov, as well as G. Möllenstedt and O. Rang in the early 1950’s. However, the samples they considered were viewed at orientations away from a zone axis, or at zone axes of low symmetry, so that dynamical interactions between the bend contours did not occur. Their calculations were thus based on purely geometric arguments. In this paper bend contours are used to measure deflections of a single-crystal silicon membrane at the (111) zone axis, where there are strong dynamical effects. Features in the bend contour pattern are identified and associated with a particular angle of bending of the membrane by reference to large-angle convergent-beam electron diffraction (LACBED) patterns.

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