Temperature Measurement by Using Metal Thin Film Thermocouples

Author(s):  
Koji Miyazaki ◽  
Hiroshi Tsukamoto ◽  
Takahiro Miike ◽  
Toshiaki Takamiya

We fabricate metal thin film thermocouples (TFTCs). Au-Pt, Cu-Ni, and W-Ni are deposited on a glass plate using standard thin film processes. The dimension of thermocouple junction is 300μm × 300μm. The thermoelectric powers of TFTCs are different from those of bulk because diffusion of electrons is restricted by the very thin film. The film thickness of TFTCs is of the same order as the mean free path of electrons. However TFTCs are still useful for temperature measurements because the thermoelectric voltage is proportional to measured temperature at thermocouple junction. The response time of Au-Pt TFTCs is about 30ns when the surface of the glass is heated by a YAG pulsed laser. The result compares favorably with measurements by a thermoreflectance method. We also describe W-Ni nano-TFTCs fabricated by Focused Ion Beam for the measurement of temperature distribution in a sub-micron area. In order to reduce the size of the TFTCs we employ a 3-dimensional structure.

1996 ◽  
Vol 67 (6) ◽  
pp. 2351-2359 ◽  
Author(s):  
Shinji Nagamachi ◽  
Yasuhiro Yamakage ◽  
Masahiro Ueda ◽  
Hiromasa Maruno ◽  
Junzo Ishikawa

2007 ◽  
Vol 15 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Ben Lich

DualBeam instruments that combine the imaging capability of scanning electron microscopy (SEM) with the cutting and deposition capability of a focused ion beam (FIB) provide biologists with a powerful tool for investigating three-dimensional structure with nanoscale (1 nm-100 nm) resolution. Ever since Van Leeuwenhoek used the first microscope to describe bacteria more than 300 years ago, microscopy has played a central role in scientists' efforts to understand biological systems. Light microscopy is generally limited to a useful resolution of about a micrometer. More recently the use of confocal and electron microscopy has enabled investigations at higher resolution. Used with fluorescent markers, confocal microscopy can detect and localize molecular scale features, but its imaging resolution is still limited. SEM is capable of nanometer resolution, but is limited to the near surface region of the sample.


1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  

Author(s):  
Mohan Prasad Manoharan ◽  
Amit Desai ◽  
Amanul Haque

Thin film specimens of titanium - titanium nitride multilayer erosion resistant coating were prepared using liftout technique in Focused Ion Beam - Scanning Electron Microscope (SEM). The fracture toughness of the thin film specimen was measured in situ using a cantilever bending experiment in SEM to be 11.33 MPa/m0.5, twice as much as conventional TiN coatings. Ti–TiN multi-layer coatings are part of a new class of advanced erosion resistant coatings and this paper discusses an experimental technique to measure the fracture toughness of these coatings.


2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.


2004 ◽  
Vol 225 (1-4) ◽  
pp. 54-58 ◽  
Author(s):  
D.Z. Xie ◽  
B.K.A. Ngoi ◽  
Y.Q. Fu ◽  
A.S. Ong ◽  
B.H. Lim
Keyword(s):  

1996 ◽  
Vol 441 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Saka ◽  
K. Kuroda ◽  
H. Takatsuji ◽  
...  

AbstractThe recent attention paid to stress migration of aluminum (Al) electrodes in thin-film transistor liquid crystal display (TFT-LCD) applications indicates that wiring materials with low electrical resistivities are of considerable interest for their potential use in higher-resolution displays. In this paper, we firstly describe how as-grown Al whiskers on Al electrodes fabricated on a LCD-grade glass substrate can be characterized by means of a high-voltage transmission electron microscope (HV-TEM) operated at 1 MV. The whiskers ranging from 300 to 400 nm in diameter are sufficient to be transparent to high-voltage electrons. This allows detailed observation of whisker characteristics such as its morphology and crystallography. In most cases, the as-grown Al whiskers in our study had straight rod shapes, and could be regarded as single crystals. Secondly, we report on the in-situ fabrication and observation of Al whiskers at elevated temperature with the HV-TEM. Since relatively thick TEM samples (up to about 1 mm) can be set on a sample holder in the HV-TEM, various growth stages of Al whiskers can be investigated under various heating conditions. Finally, we demonstrate a TEM sample preparation method for the cross-section of an individual Al whisker, using focused ion beam (FIB) etching. This technique makes it possible to reduce the thickness of an Al whisker close to the root. Both bright- and dark-field TEM images provide nanostructural information on the whisker/Al thin-film interface.


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