Fabrication of Dc-SQUID with As-Grown YBaCuO Thin Film by Focused Ion Beam

1990 ◽  
pp. 987-990
Author(s):  
M. Tanioku ◽  
K. Kuroda ◽  
K. Kojima ◽  
K. Hamanaka ◽  
Y. H. Hisaoka ◽  
...  
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

Temperature Measurement by Using Metal Thin Film Thermocouples

2003 ◽  
Author(s):  
Koji Miyazaki ◽  
Hiroshi Tsukamoto ◽  
Takahiro Miike ◽  
Toshiaki Takamiya
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Glass Plate ◽  
Mean Free Path ◽  
Dimensional Structure ◽  
Measured Temperature ◽  
Metal Thin Film ◽  
Thin Film Thermocouples ◽  
Thermocouple Junction

We fabricate metal thin film thermocouples (TFTCs). Au-Pt, Cu-Ni, and W-Ni are deposited on a glass plate using standard thin film processes. The dimension of thermocouple junction is 300μm × 300μm. The thermoelectric powers of TFTCs are different from those of bulk because diffusion of electrons is restricted by the very thin film. The film thickness of TFTCs is of the same order as the mean free path of electrons. However TFTCs are still useful for temperature measurements because the thermoelectric voltage is proportional to measured temperature at thermocouple junction. The response time of Au-Pt TFTCs is about 30ns when the surface of the glass is heated by a YAG pulsed laser. The result compares favorably with measurements by a thermoreflectance method. We also describe W-Ni nano-TFTCs fabricated by Focused Ion Beam for the measurement of temperature distribution in a sub-micron area. In order to reduce the size of the TFTCs we employ a 3-dimensional structure.

Fracture Toughness of Titanium - Titanium Nitride Multi-Layer Thin Film

2008 ◽  
Author(s):  
Mohan Prasad Manoharan ◽  
Amit Desai ◽  
Amanul Haque
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Titanium Nitride ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
New Class ◽  
Tin Coatings ◽  
Film Specimen ◽  
Cantilever Bending ◽  
Layer Thin Film

Thin film specimens of titanium - titanium nitride multilayer erosion resistant coating were prepared using liftout technique in Focused Ion Beam - Scanning Electron Microscope (SEM). The fracture toughness of the thin film specimen was measured in situ using a cantilever bending experiment in SEM to be 11.33 MPa/m0.5, twice as much as conventional TiN coatings. Ti–TiN multi-layer coatings are part of a new class of advanced erosion resistant coatings and this paper discusses an experimental technique to measure the fracture toughness of these coatings.

A Membrane Deflection Fracture Experiment to Investigate Fracture Toughness of Freestanding MEMS Materials

2003 ◽  
Vol 795 ◽  
Author(s):  
H. D. Espinosa ◽  
B. Peng
Keyword(s):  
Thin Film ◽  
Fracture Toughness ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Mean Value ◽  
Advanced Materials ◽  
Ultrananocrystalline Diamond ◽  
Membrane Deflection

ABSTRACTThis paper presents a novel Membrane Deflection Fracture Experiment (MDFE) to investigate the fracture toughness of MEMS and other advanced materials in thin film form. It involves the stretching of freestanding thin-film membranes, in a fixed-fixed configuration, containing pre-existing cracks. The fracture behavior of ultrananocrystalline diamond (UNCD), a material developed at Argonne National Laboratory, is investigated to illustrate the methodology. When the fracture initiates from sharp cracks, produced by indentation, the fracture toughness was found to be 4.7 MPa m1/2. When the fracture initiates from blunt notches with radii about 100 nm, machined by focused ion beam (FIB), the mean value of the apparent fracture toughness was found to be 7.2 MPa m1/2. Comparison of these two values, using the model proposed by Drory et al. [9], provides a correction factor of 2/3, which corresponds to a mean value of ρ/2x=1/2.

Etching characteristics of TiNi thin film by focused ion beam

2004 ◽  
Vol 225 (1-4) ◽  
pp. 54-58 ◽  
Author(s):  
D.Z. Xie ◽  
B.K.A. Ngoi ◽  
Y.Q. Fu ◽  
A.S. Ong ◽  
B.H. Lim
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Ion Beam

In-Situ Tem Characterization of Whiskers on Al Electrodes for Thin-Film Transistors

1996 ◽  
Vol 441 ◽  
Author(s):  
K. Tsujimoto ◽  
S. Tsuji ◽  
H. Saka ◽  
K. Kuroda ◽  
H. Takatsuji ◽  
...  
Keyword(s):  
Thin Film ◽  
High Voltage ◽  
Focused Ion Beam ◽  
Liquid Crystal Display ◽  
Ion Beam ◽  
Thin Film Transistor ◽  
Dark Field ◽  
Growth Stages ◽  
In Situ Tem

AbstractThe recent attention paid to stress migration of aluminum (Al) electrodes in thin-film transistor liquid crystal display (TFT-LCD) applications indicates that wiring materials with low electrical resistivities are of considerable interest for their potential use in higher-resolution displays. In this paper, we firstly describe how as-grown Al whiskers on Al electrodes fabricated on a LCD-grade glass substrate can be characterized by means of a high-voltage transmission electron microscope (HV-TEM) operated at 1 MV. The whiskers ranging from 300 to 400 nm in diameter are sufficient to be transparent to high-voltage electrons. This allows detailed observation of whisker characteristics such as its morphology and crystallography. In most cases, the as-grown Al whiskers in our study had straight rod shapes, and could be regarded as single crystals. Secondly, we report on the in-situ fabrication and observation of Al whiskers at elevated temperature with the HV-TEM. Since relatively thick TEM samples (up to about 1 mm) can be set on a sample holder in the HV-TEM, various growth stages of Al whiskers can be investigated under various heating conditions. Finally, we demonstrate a TEM sample preparation method for the cross-section of an individual Al whisker, using focused ion beam (FIB) etching. This technique makes it possible to reduce the thickness of an Al whisker close to the root. Both bright- and dark-field TEM images provide nanostructural information on the whisker/Al thin-film interface.

Modeling and Simulation of Focused Ion Beam Based Single Digital Nano Hole Fabrication for DNA and Macromolecule Characterization

2008 ◽  
Author(s):  
Jack Zhou ◽  
Guoliang Yang
Keyword(s):  
Thin Film ◽  
Focused Ion Beam ◽  
Electrochemical Etching ◽  
Ion Beam ◽  
Machining Process ◽  
Single Digit ◽  
Nano Fabrication ◽  
Dna And Rna ◽  
Epitaxial Deposition ◽  
Micro Holes

In this paper we describe a top down nano-fabrication method to make single-digit nanoholes that we aim to use for DNA and RNA characterization. There are three major steps towards the fabrication of a single-digit nanohole. 1) Preparing the freestanding thin film by epitaxial deposition and electrochemical etching. 2) Making sub-micro holes (0.2 μm to 0.02μm) by focused ion beam (FIB), electron beam (EB), atomic force microscope (AFM), or other methods. 3) Reducing the hole to less than 10 nm by epitaxial deposition, FIB or EB induced deposition. One specific aim for this paper is to model, simulate and control the focused ion beam machining process to fabricate holes which can reach single-digit nanometer scale on solid-state thin films. Preliminary work has been done on the thin film (30 nm in thickness) preparation, sub-micron hole fabrication, and ion beam induced deposition, and results are presented.

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